VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS

Lin Zhaohui; Xu Huiying

Volume 7 Issue 4

Jul. 1985

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Article Navigation > Journal of Electronics & Information Technology > 1985 > 7(4): 315-318

Lin Zhaohui, Xu Huiying. VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS[J]. Journal of Electronics & Information Technology, 1985, 7(4): 315-318.

Citation:

Lin Zhaohui, Xu Huiying. VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS[J]. Journal of Electronics & Information Technology, 1985, 7(4): 315-318.

Lin Zhaohui, Xu Huiying. VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS[J]. Journal of Electronics & Information Technology, 1985, 7(4): 315-318.

Citation:

Lin Zhaohui, Xu Huiying. VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS[J]. Journal of Electronics & Information Technology, 1985, 7(4): 315-318.

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VERIFICATION OF THE PHYSICAL REASON FOR THE CURRENT GAIN FALL-OFF AT HIGH CURRENTS

Received Date: 1983-06-13
Rev Recd Date: 1984-11-08
Publish Date: 1985-07-19

Abstract

Abstract

Starting from the temperature characteritics of the transistor current gain, the temperature-dependent law of the collector current just as the current gain begins to fall-off is studied theoretically and experimentally. It is verified that the physical reason is the base widening effect.

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References(1)

References

W. M. Webster, Proc. IRE, 42(1954), 914.[2]C. T. Kirk, IEEE Trans. on ED, ED-9(1962), 164.[3]R. J. Whitter and D. A. Tremere, ibid., ED16 (1969), 39.[4]D. L. Bowler and F. A. Lindholm, ibid, ED-20(1973), 257.[5]P. L. Hower, ibid, ED-20 (1973), 426.[6]R. Kumar and L. P. Hunter, ibid., ED-22(1975), 1031.[7]G. Rey, F. Dupuy and J. P. Bailbe, Solid-State Electron. 18(1975), 863.[8]C. B. Norris and J. F. Gibbons, IEEE Trans. on ED, ED-14(1967), 38.[9]F. J. Morin, Phys. Rev., 93(1954), 62.[10]E. I. Ruder, ibid, 90(1951), 766.[11]C, Kittel, Introduction to Solid State Physics, p. 94, New York, John Wiley and Sons., Inc.,1956.[12]H. F. Wolf, Silicon Semiconductor Data, Signetics Corporation, 1969, p. 32.

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