STUDY OF THE DIFFUSION OF Cd AND Zn IN InP

Pang Yongxiu; Sun Bingyu

Volume 7 Issue 4

Jul. 1985

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Pang Yongxiu, Sun Bingyu. STUDY OF THE DIFFUSION OF Cd AND Zn IN InP[J]. Journal of Electronics & Information Technology, 1985, 7(4): 297-303.

Citation:

Pang Yongxiu, Sun Bingyu. STUDY OF THE DIFFUSION OF Cd AND Zn IN InP[J]. Journal of Electronics & Information Technology, 1985, 7(4): 297-303.

Pang Yongxiu, Sun Bingyu. STUDY OF THE DIFFUSION OF Cd AND Zn IN InP[J]. Journal of Electronics & Information Technology, 1985, 7(4): 297-303.

Citation:

Pang Yongxiu, Sun Bingyu. STUDY OF THE DIFFUSION OF Cd AND Zn IN InP[J]. Journal of Electronics & Information Technology, 1985, 7(4): 297-303.

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STUDY OF THE DIFFUSION OF Cd AND Zn IN InP

Received Date: 1984-01-25
Rev Recd Date: 1985-01-29
Publish Date: 1985-07-19

Abstract

Abstract

Study of the diffusion of Cd and Zn into InP at temperature of 450-700℃is described. The effects of various impurity sourees, such as Cd, Zn and their compounds on the diffusion are studied in detail. Using the ratio of the square of the diffusion depth x2 and the time t as the mcasure of the diffusion velocity, a plot of x2/t versus temperature T is given. It is found that the diffusion velocity of Cd is slower, especially when CdP2 is used as diffusion source, and thus the diffusion depth and concentration of Cd are easier to be controlled. So it is a more ideal diffusion impurity source. The complicated phenomena of Cd-and Zn-diffusion in InP are explained with neutral complex proposed by Tien (1979).

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References

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