THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM

Peng Ruiwu; Xu Chenmei; Li Chuiyu; Wang Bohong

Volume 7 Issue 4

Jul. 1985

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Article Navigation > Journal of Electronics & Information Technology > 1985 > 7(4): 319-322

Peng Ruiwu, Xu Chenmei, Li Chuiyu, Wang Bohong . THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM[J]. Journal of Electronics & Information Technology, 1985, 7(4): 319-322.

Citation:

Peng Ruiwu, Xu Chenmei, Li Chuiyu, Wang Bohong . THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM[J]. Journal of Electronics & Information Technology, 1985, 7(4): 319-322.

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THE CADMIUM INCOPORATION AND THE PREPARATION OF p-n JUNCTION MATERIALS IN Ga-AsCl3-H2 SYSTEM

Received Date: 1983-12-12
Rev Recd Date: 1984-08-13
Publish Date: 1985-07-19

Abstract

Abstract

The incoporation and the behavior of impurity Cd in VPE of GaAs were studiecl using elemental Cd as a dopant in Ga-AsCl3-H2 system. The distribution coefficient of Cd and its solubility in GaAs were found to be 0.01-0.001 and 41018 cm-3 respectively. The relationship between the electrical properties and epitaxial parameters has been discussed. As a result, the epilayers whh p-n or p+-p-n junction were prepared using elemental S and Cd doping techniques. The materials obtained in this way have a smooth surface morphology and a good interfacial properties.

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References(1)

References

Peng Ruiwu(彭瑞伍), J. Crystal Growth, 56(1982), 350.[2]彭瑞伍,孙裳珠,沈松华,电子科学学刊,5(1983) 16.[3]J. Chermier et al., J. Appl. Phys., 53 (1983), 3247.[4]彭瑞伍,江文达,孙裳珠等,第七次国际晶体生长会议摘要集,西德,1983.[5]Y. G. Sidorov and L. F. Uasilesa, J. Electrochem. Soc., 123(1976), 698.[6]彭瑞伍,1983年全国砷化稼和有关化合物会议摘要集,上海,1983.[7]S. M. Sze and J. C. Irrin, Solid State Electron., 11(1976), 599.[8]邵永富,陈自姚,彭瑞伍,半导体学报,3(1982), 216.

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