一种具有新型增益控制技术的CMOS宽带可变增益LNA

谌斐华; 多新中; 孙晓玮

doi:10.3724/SP.J.1146.2009.01418

一种具有新型增益控制技术的CMOS宽带可变增益LNA

doi: 10.3724/SP.J.1146.2009.01418

谌斐华^{①② 多新中},
多新中,
孙晓玮

基金项目:

国家863计划项目(2007AA01Z2B1)资助课题

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出版历程
- 收稿日期: 2009-11-02
- 修回日期: 2010-02-15
- 刊出日期: 2010-11-19

A CMOS Wideband Variable Gain LNA with Novel Gain Control Method

Chen Fei-Hua^{①② 多新中},
Duo Xin-Zhong,
Sun Xiao-Wei

摘要

摘要: 高速超宽带无线通信的多标准融合是未来射频器件的发展趋势，该文提出一种基于CMOS工艺、具有新型增益控制技术的宽带低噪声放大器(LNA)，采用并联电阻反馈实现宽带输入匹配，并引入噪声消除技术来减小噪声以提高低噪声性能；输出带有新型6位数字可编程增益控制电路以实现可变增益。采用中芯国际0.13m RF CMOS工艺流片，芯片面积为0.76 mm2。测试结果表明LNA工作频段为1.1-1.8 GHz，最大增益为21.8 dB、最小增益8.2 dB，共7种增益模式。最小噪声系数为2.7 dB，典型的IIP3为-7 dBm。
- RF CMOS /
- 低噪声放大器(LNA) /
- 噪声消除 /
- 宽带 /
- 可变增益
Abstract: Multi-standard convergence for high speed ultra-wideband wireless communication leads the evolution for future RF devices. In this paper a CMOS wideband low noise amplifier (LNA) with novel gain control method is presented. In the first stage shunt-resistor feedback is used for wideband input matching, while for low noise performance noise cancelling circuit is adopted. A novel 6-bit digital programmable gain control circuit is exploited and adopted in the second stage for variable gain. Fabricated with SMIC 0.13m RF CMOS process, die area is 0.76mm2. Measured results show that the LNA operates in 1.1-1.8 GHz frequency band, and the maximum and minimum gain are 21.8 dB and 8.2 dB, 7 gain modes in all. Minimum noise figure is 2.7 dB. Typical IIP3 is -7 dBm.
- RF CMOS /
- Low Noise Amplifier (LNA) /
- Noise cancelling /
- Wideband /
- Variable gain

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参考文献(1)

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