Peng Long-xin and Li Jian-ping. Wide band MIMIC lownoise amplifier[J]. Research and Progress of Solid StateElectronics, 2008, 28(2): 203-207.[2]Chiu H C, Cheng C S, and Wei C C, et al.. A 3 to 5GHzultra-wideband low noise amplifier using InGaP/InGaAsenhancement-mode PHEMT technology[J]. MicrowaveJournal, 2008, 51(6): 86-94.[3]Hau G, Shih H, and Aoki Y, et al.. A 33mm2embedded-wafer-level packaged WCDMA GaAs HBT poweramplifier module with integrated Si DC power managementIC[C]. Proceeding of IEEE RFIC, Atlanta, USA, June 15-17,2008: 409-412.[4]Tohru O, Masatomo H, and Michitoshi H, et al.. Ahigh-power low-distortion GaAs HBT power amplifier formobile terminals used in broadband wireless applications[J].IEEE Journal of Solid-State Circuits.2007, 42(10):2123-2129[5]Shen Pei, Zhang Wan-rong, and Jin Dongyue, et al.. Multipleemitter-finger microwave power GeSi HBT with largecurrent-handling capability[J]. Journal of FunctionalMaterials and Devices, 2009, 49(4): 382-386.[6]Wei-Min L K, Ramkumar K, and Li Xiang-tao, et al.. Alow-power, X-band SiGe HBT low-noise amplifier fornear-space radar applications[J].IEEE Microwave andWireless Components Letters.2006, 16(9):520-522[7]Jonathan P C, Matthew A M, and Weimin L K, et al.. Asilicon-germanium receiver for X-band transmit/receive radarmodules[J].IEEE Journal of Solid-State Circuits.2008, 43(9):1889-1896[8]Shen Pei, Zhang Wan-rong, and Xie Hong-yun, et al.. Anultra-wideband darlington low noise amplifier design basedon SiGe HBT[C]. Proceedings of IEEE ICMMT, Nanjing,China, April 21-24, 2008: 1372-1375.[9]Reinhold L and Pavel B. RF Circuit Design: Theory andApplications[M]. New Jersey: Prentice Hall, 1999: 629-630.
|