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螺旋带径向厚度对色散和耦合阻抗的影响

樊会明 肖刘 韩博 苏小保

樊会明, 肖刘, 韩博, 苏小保. 螺旋带径向厚度对色散和耦合阻抗的影响[J]. 电子与信息学报, 2007, 29(2): 492-495. doi: 10.3724/SP.J.1146.2006.00028
引用本文: 樊会明, 肖刘, 韩博, 苏小保. 螺旋带径向厚度对色散和耦合阻抗的影响[J]. 电子与信息学报, 2007, 29(2): 492-495. doi: 10.3724/SP.J.1146.2006.00028
Fan Hui-ming, Xiao liu, Han bo, Su Xiao-bao. Effect of the Radial Thickness of Helix on Dispersion and Coupling Impedance in TWTs[J]. Journal of Electronics & Information Technology, 2007, 29(2): 492-495. doi: 10.3724/SP.J.1146.2006.00028
Citation: Fan Hui-ming, Xiao liu, Han bo, Su Xiao-bao. Effect of the Radial Thickness of Helix on Dispersion and Coupling Impedance in TWTs[J]. Journal of Electronics & Information Technology, 2007, 29(2): 492-495. doi: 10.3724/SP.J.1146.2006.00028

螺旋带径向厚度对色散和耦合阻抗的影响

doi: 10.3724/SP.J.1146.2006.00028

Effect of the Radial Thickness of Helix on Dispersion and Coupling Impedance in TWTs

  • 摘要: 该文将有限厚度的实际螺旋带等效为存在无限薄螺旋带的等厚真空层,从场分析和软件模拟两个方面研究了等效慢波结构的色散特性和耦合阻抗。将理论计算、软件模拟和实验测试结果进行了比较,结果表明,用真空层等效有限厚度的实际螺旋带时,将无限薄螺旋带置于等厚真空层的中央,其螺旋慢波结构的色散特性和耦合阻抗的理论计算、软件模拟和实验测试结果三者取得了很好的一致。
  • [1] Antonsen T M, Jr., Mondelli A A, Levush B, Verboncoeur J P, and Birdsall C K. Advances in modeling and simulation of vacuum electronic devices. Proc. IEEE, 1999, 87(5): 804-839. [2] 段兆云,宫玉彬,王文祥,雷文强,蓝永海.考虑螺旋带径向厚度的螺旋慢波结构的研究. 强激光与离子束,2002, 14(6): 905-910. [3] 张勇,莫元龙,李建清,周晓岚.翼片加载螺旋线慢波结构的螺旋带模型. 强激光与离子束, 2002, 14(6): 887-891. [4] Kapoor S,Raju R S, Gupta R K, Joshi S N, and Basu B N. Analysis of an inhomogeneously loaded helical slow-wave- structure for broad-band TWTs[J].IEEE Trans.Edu.1989, 36(9):2000-2004 [5] Kumar L, Raju R S, Joshi S N, and Basu B N. Modeling of a vane-loaded helical slow-wave structure for broad-band traveling-wave tube. IEEE on Trans.Edu., 1989, 39(9): 1991- 1999. [6] Raju R S, Joshi S N, and Basu B N. Modeling of practical multi-octave-band slow-wave structures of a traveling-wave tube for interaction impedance[J].IEEE Trans. on Edu.1992, 39(9):996-1001 [7] Chang Y T. A study of helix-coupled vane slow-wave structure. Acta. Elec. Sin., 1986, 16(8): 67-75. [8] Kartikeyan M V, Sinha A K, Bandopadhyay H N, and Venkateswarlu D S. A study of a radially thick helix: Equivalent circuit approach[J].IEEE Trans. on Edu.1992, 39(8):1961-1965 [9] Kartikeyan M V, Sinha A K, Bandopadhyay H N, and Venkateswarlu D S. Effective simulation of the radial thickness of helix of broad band, Practical TWTs[J].IEEE Trans. on Plasma Science.1999, 27(4):1115-1123 [10] Chernin D, Antonsen T M, Jr., and Levush B. Exact treatment of the dispersion and beam interaction impedance of a thin tape helix surrounded by a radially stratified dielectric. IEEE Trans. on Electron Devices, 1999, 46(7): 1472-1483. [11] Kory C L and Dayton J A. Accurate cold-test model of helical TWT slow-wave circuits[J].IEEE Trans. on Electron Devices.1998, 45(4):966-971 [12] Kory C L and Dayton J A. Effect of helical slow-wave circuit variations on TWT cold-test Characteristics[J].IEEE Trans. on Electron Devices.1998, 45(4):972-976 [13] Rao S J, Ghosh S, Jain P K,and Basu B N. Nonresonant perturbation measurements on dispersion and interaction impedance characteristics of helical slow wave structure[J].On Microwave Theory and Techniques.1997, 45(9):1585-1593 [14] Greninger Paul. Tape helix perturbation including 3-D dielectrics for TWTs[J].IEEE Trans. on Electron Devices.2001, 48(1):12-23
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出版历程
  • 收稿日期:  2006-01-06
  • 修回日期:  2006-06-09
  • 刊出日期:  2007-02-19

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