一种低电压、高增益电荷泵

杨盛光; 何书专; 高明伦; 李伟; 周松明

doi:10.3724/SP.J.1146.2005.01521

一种低电压、高增益电荷泵

doi: 10.3724/SP.J.1146.2005.01521

基金项目:

国家自然科学基金(90307011)资助课题

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出版历程
- 收稿日期: 2005-11-25
- 修回日期: 2006-05-08
- 刊出日期: 2007-08-19

A New Charge Pump with High Voltage Gain for Low Supply Environment

摘要

摘要: 电荷泵在低压电路中扮演着重要的角色。作为片上电荷泵，其面临的主要问题是：电压增益、电压纹波和面积效率。该文提出了一种新型的电荷泵电路，它采用辅助电荷泵、电平转移电路结构来产生不同摆幅的时钟，该时钟被用来驱动开关管的栅极，以有效控制开关管的电导，提高电压增益。由于采用PMOS管作为开关管，传输过程中避免了阈值电压损失。仿真结果显示，与以往文献中提到的电荷泵结构相比，该电荷泵具有更高的电压增益，开启时间短，纹波小，在低压应用环境优势更为突出。
- 电荷泵;电压增益;开关管;阈值电压;电导
Abstract: Charge pump plays an important role in low supply voltage integrated circuits. Three important issues of on-chip charge pump circuits are voltage gain, output voltage ripple and area efficiency. A new charge pump is proposed in this paper which introduces a subsidiary charge pump and two voltage level shifters. The new structure can generate different magnitude clocks to drive the gates of switch transistors, which will improve voltage gain of charge pump greatly by means of effective control of conduction of them. At the other hand, we can avoid the threshold voltage loss by taking PMOS transistors as switch transistors. Simulation results show: The new charge pumps have higher voltage gain, shorter start up time and small voltage ripple compared with those proposed in earlier papers, especially in low supply voltage environment.

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参考文献(1)

Wu Jieh-Tsorng and Chang Kuen-Long. MOS charge pumps for low-voltage operation[J].IEEE Journal of Solid-State Circuits.1998, 33(4):592-597[2]Perigny R. Area efficiency improvement of CMOS charge pump circuits, a thesis for degree of Master. Oregon State University, 2000.[3]Sawada K.[J].Sugawara Y, and Masui S. An on-chip voltage generator circuit for EEPROMs with a power-supply voltage below 2 V, in Symp. VLSI Circuits Dig., Kyoto, Japan.1997,:-Choi K H, Park J M, Kim J K, Jung T S, and Suh K D. Floating-well charge-pump circuits for sub-2.0-V single power supply flash memories, in Symp. VLSI Circuits Dig., Kyoto, Japan, 1997: 61-62.[4]Shin J, Chung In-Young, Park Y J, and Min H S. A new charge pump without degradation in threshold voltage due to body effect[J].IEEE Journal of Solid-State Circuits.2000, 35(8):1227-[5]Pelliconi R and Iezzi D, et al.. Power efficient charge pump in deep submicron standard CMOS technology[J].IEEE Journal of Solid-State Circuits.2003, 38(6):1068-1071[6]Hoque M R and Ahmad T, et al.. A technique to increase the efficiency of high-voltage charge pumps[J].IEEE Trans. on Circuits and Systems II: Analog and Digital Signal Processing.2006, 53(5):364-368[7]Racap E and Daga Jean-Michel. A PMOS-switch based charge pump, allowing lost cost Implementation on a CMOS standard process, Proceedings of ESSCIRC, Grenoble, France, 2005: 77-80.Mensi Luca and Colalongo Luigi, et al.. A new integrated charge pump architecture using dynamic biasing of pass transistors. Proceedings of ESSCIRC, Grenoble, France, 2005: 85-88.[8]Favrat P, Deval P, and Declercq M J. A high-efficiency CMOS voltage doubler[J].IEEE Journal of Solid-State Circuits.1998, 33(3):410-416[9]Lee Jae-Youl and Kim Sung-Eun, et al.. A regulated charge pump with small ripple voltage and fast start-up[J].IEEE Journal of Solid-State Circuits.2006, 41(2):425-432[10]Shin Soon-Kyun and Kong Bai-Sun, et al.. A high current driving charge pump with current regulation method. IEEE 2005 Custom Integrated Circuits Conference, San Jose, California, 2005: 207-210.

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