面向超表面天线设计的95～105 GHz SiGe BiCMOS宽带数控衰减器

罗将; 张文柱; 程强

doi:10.11999/JEIT240059

面向超表面天线设计的95～105 GHz SiGe BiCMOS宽带数控衰减器

doi: 10.11999/JEIT240059

罗将^{1, 2, ,},
张文柱¹,
程强²

1.
杭州电子科技大学电子信息学院杭州 310018
2.
东南大学毫米波国家重点实验室南京 210096

基金项目: 国家重点研发计划(2023YFB3811503)，浙江省自然科学基金(LQ23F040009)，毫米波国家重点实验室 (K202316)

详细信息

作者简介:
罗将：男，副教授，研究方向为智能超表面调控器件与芯片、毫米波单片集成电路与系统

张文柱：男，硕士生，研究方向为硅基毫米波幅度控制电路设计

程强：男，教授，研究方向为人工电磁材料、天线、微波毫米波成像、射频电路、雷达系统

通讯作者:
罗将　luojiang@hdu.edu.cn

中图分类号: TN433
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出版历程
- 收稿日期: 2024-01-26
- 修回日期: 2024-09-05
- 网络出版日期: 2024-09-10

95～105 GHz SiGe BiCMOS Wideband Digitally Controlled Attenuator for Metasurface Antenna Design

1.
School of Electronics and Information Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
2.
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China

Funds: The National Key Research and Development Program of China (2023YFB3811503), The Zhejiang Provincial Natural Science Foundation of China (LQ23F040009), The State Key Laboratory of Millimeter Waves (K202316)

摘要

摘要: 近年来，因对电磁波具备灵活的调控能力，超表面天线技术受到来自通信、雷达以及天线领域学者的广泛关注。其中，超表面天线单元中所使用的有源调控器件，是决定整个系统性能的最关键部件之一。基于0.13 μm SiGe BiCMOS工艺设计了一个95～105 GHz的五位宽带数控衰减器芯片。该衰减器采用了反射式和简化T型两种拓扑结构，其中4 dB与8 dB反射式衰减单元采用交叉耦合宽带耦合器代替传统的3 dB耦合器或定向耦合器，同时获得了高衰减精度和低插入损耗；而0.5 dB, 1 dB, 2 dB三个衰减单元均采用简化T型结构。此外，利用RC正斜率和负斜率校正网络分别应用于不同的衰减单元进行相位补偿，极大地改善了衰减器的附加相移。经过仿真验证，在95～105 GHz的感兴趣工作频率内，衰减器芯片在0.12 mm²的紧凑的尺寸下实现了0～15.5 dB的衰减范围，步进为0.5 dB，基态插入损耗小于2.5 dB，幅度均方根误差小于0.31 dB，附加相移均方根误差小于2.2º。所提出的W波段衰减器可作为一个关键部件赋能集成T/R的辐散一体化超表面天线系统的硬件实现。
- SiGe BiCMOS /
- W波段 /
- 衰减器 /
- 交叉耦合宽带耦合器 /
- 超表面
Abstract: Recently, metasurface antenna technology has raised meticulous attention from scholars in the communications, radar, and antenna communities, owing to its great capability in flexible control of electromagnetic waves. In particular, the active tunable device used in the metasurface antenna element is one of the most significant components that affect the performance of the entire system. In this paper, a 95 to 105 GHz digitally controlled attenuator with 5-bit resolution is designed in a 0.13 μm SiGe BiCMOS process. The attenuator employs two different topological structures, reflective and simplified T-type. The 4 dB and 8 dB reflective attenuation units utilize cross-coupled broadband couplers instead of traditional 3 dB couplers or directional couplers, achieving high attenuation precision and low insertion loss. On the other hand, the 0.5 dB, 1 dB, and 2 dB attenuation units adopt a simplified T-type structure. Furthermore, the utilization of RC positive and negative slope correction networks applied separately to different attenuation units enables phase compensation, significantly improving the additional phase shift of the attenuator. Within the desired frequency range of 95～105 GHz, the attenuator achieves an attenuation range of 0～15.5 dB with a step of 0.5 dB in a compact size of 0.12 mm². It exhibits a simulated insertion loss below 2.5 dB, a simulated amplitude Root Mean Square (RMS) error less than 0.25 dB, and a simulated phase RMS error is better than 2.2°. The proposed W-band attenuator can serve as a key component empowering the hardware implementation of an integrated Transmit/Receive (T/R) metasurface antenna system with simultaneous radiation and scattering control.
- SiGe BiCMOS /
- W-band /
- Attenuator /
- Wideband coupler with cross-coupling /
- Metasurface

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图 1 反射式衰减单元的拓扑结构图

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图 2 衰减量与归一化负载阻抗的关系

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图 3 所提出的耦合器的3维物理模型

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图 4 耦合器在端口匹配时与传统传输线的插入损耗仿真结果

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图 5 等效电路模型

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图 6 等效电路模型和3维物理模型仿真结果对比

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图 7 相位补偿结构

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图 8 不同相位补偿结构下阻抗的相位和模值随频率变化的响应曲线

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图 9 W波段5位数控衰减器原理图

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图 10 W波段5位数控衰减器版图

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图 11 全态衰减曲线

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图 12 所有衰减态下相位变化曲线

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图 13 插入损耗变化曲线

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图 14 RMSA与RMSP曲线

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表 1 等效电路模型元器件的参数值

器件	参数值	器件	参数值
L₁	85.3 pH	C₁	0.5 fF
L₂	22.0 pH	C₂	2.7 fF
L₃ R₁ k	13.0 pH 1.9 ohm 0.7	C₃ C₄	12.8 fF 0.7 fF

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表 2 关键器件参数

器件	参数值	器件	参数值	器件	参数值	器件	参数值
T_1,2(W/L)	120 nm/630 nm	C_1,2,4	20 fF	R₄	1298 ohm	R₉	81 ohm
T₃(W/L)	120 nm/1050 nm	C₃	12 fF	R₅	57 ohm	R₁₀	223 ohm
T₄(W/L)	120 nm/850 nm	R₁	126 ohm	R₆	2273 ohm
T₅(W/L)	120 nm/900 nm	R₂	301 ohm	R₇	190 ohm
T_6,7(W/L)	120 nm/1200 nm	R₃	1433 ohm	R₈	100 ohm
W:发射极宽度 L:发射极长度

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表 3 性能总结和已报道的硅基毫米波衰减器芯片对比

文献	2014^[6]	2016^[18]	2021^[19]	2022^[22]	^#本文
工艺	65 nm CMOS	180 nm SiGe BiCMOS	65 nm CMOS	130 nm SiGe BiCMOS	130 nm SiGe BiCMOS
频率(GHz)	50～110	57-64	80～110	190～220	95～105
拓扑结构	Distributed	Distributed	Coupled	Coupled lines	Reflected+T type
位数(bit)/步进(dB)	14/0.75	4/1.0	6/NA	4/0.35	5/0.50
衰减范围(dB)	0～10.0	0～11.8	0～14.5	0～4.7	0～15.5
插入损耗(dB)	11.2	11.0	4.5*	2.0	2.5
幅度均方根误差(RMSA)(dB)	NA	＜1.54	＜0.31	＜0.34	＜0.31
相位变化(º)	＜5.0	12.0*	＜12.0	NA	＜4.8
相位均方根误差(RMSP)(º)	＜1.4	＜3.6	NA	NA	＜2.2
面积(mm²)	0.38	0.94	0.06	0.03	0.12
*：估算 ^#：仿真结果

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