Low-power Microcontroller Units Design and Realization Using Emerging Tunneling Field Effect Transistors
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摘要: 基于隧穿场效应晶体管(TFET)器件的低功耗微控制器设计将器件、电路和系统结合，利用具有超低亚阈值摆幅特性的器件使得电路在非工作情况下达到极低泄露功耗，避免了金属氧化物半导体场效应晶体管(MOSFET)器件亚阈值摆幅理论极限带来的功耗瓶颈，解决了目前对电池供电设备中微控制器的低功耗需求问题。TFET器件与传统MOSFET器件在工作机理上差异较大，主要体现在关断后具有更低的泄露电流，可以在更低的电压下工作，适用于长休眠电池供电低功耗需求下的物联网应用场景设计。该文调研了近年来TFET器件在低功耗电路设计方面的研究，介绍了传统微控制器的结构以及功耗来源，同时阐述了TFET器件的工作原理、特性以及设计挑战，在数字电路、模拟电路以及系统设计各领域考察了TFET器件的研究发展进程，并对各设计方案进行了优劣势分析，结合文献调研分析了TFET器件在低功耗微控制器设计领域的未来展望。Abstract: Tunneling Field Effect Transistor (TFET)-based low-power microcontroller design combines devices, circuits, and systems to achieve extremely low leakage power consumption under non-operating conditions through devices with ultra-low subthreshold swing characteristics, avoiding the power bottleneck brought about by the theoretical limit of the subthreshold swing of MOSFETs, and solving the problem of low power consumption of battery-powered microcontrollers. TFETs differ greatly from traditional MOSFETs in their operating mechanism, mainly in that they have lower leakage current after shutdown and can operate at lower voltages, which makes them suitable for IoT application scenarios with low-power requirements for long-dormant battery power supply. The paper investigates the research of TFET devices in low-power circuit design in recent years, introduces the structure of traditional microcontrollers and the source of power consumption, and at the same time explains the working principle, characteristics and design challenges of TFET devices, examines the research and development process of TFETs in the fields of digital circuits, analog circuits, and system design, and analyzes the strengths and weaknesses of each design scheme, and analyzes the advantages and disadvantages of TFETs in low-power circuits, in combination with the research of the literature. The future outlook of TFETs in the field of low-power microcontrollers is analyzed.
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Key words:
- Internet of Things (IoT) /
- low power /
- Micro controller unit /
- Novel tunneling device
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