A 16 Gbit/s Serializer/Deserializer with Adaptive Continuous Time Linear Equalizer and Decision Feedback Equalizer Equalization Algorithm
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摘要: 该文在体硅CMOS工艺下设计了一种16 Gbit/s并转串/串转并接口(SerDes)芯片，该SerDes由4个通道(lanes)和2个锁相环(PLLs)组成。在接收器模拟前端(AFE)采用负阻抗结构连续时间线性均衡器(CTLE)，得到22.9 dB高频增益，利用5-tap判决反馈均衡器(DFE)进一步对信号码间干扰(ISI)做补偿，其中tap1做展开预计算处理，得到充足的时序约束条件。采用最小均方根(LMS)算法自适应控制CTLE和DFE的补偿系数来对抗工艺、电源和温度波动带来的影响。测试结果表明，芯片工作在16 Gbit/s时，总功耗为615 mW。发射器输出信号眼高为143 mV，眼宽43.8 ps(0.7UI)，接收器抖动容忍指标在各频点均满足PCIe4.0协议要求，工作温度覆盖–55°C～125°C，电源电压覆盖0.9 V±10%，误码率小于1E-12。Abstract: A 16 Gbit/s Serializer/Deserializer interface(SerDes) chip which is composed of 4 lanes and 2 Phase-Locked Loop(PLLs), is designed in bulk CMOS technology. A negative impedance structure Continuous Time Linear Equalizer(CTLE) is used in the Analog Front End(AFE) of the receiver to obtain 22.9 dB high frequency gain. Further, 5-tap Decision Feedback Equalizer(DFE) is used to compensate the Inter Symbol Interference(ISI), and tap1 unrolled to obtain sufficient timing constraints. Least Mean Square(LMS) algorithm is used to control adaptive CTLE and DFE compensation coefficient to counter the influence of process, power supply and temperature fluctuations. The measurement results show that, the total power consumption is 615mW when working at 16 Gbit/s. Transmitter output signal eye height is 143 mV, width is 43.8 ps(0.7UI), jitter tolerance of the receiver contents the PCIe4.0 protocol requirements at all frequency, working temperature cover –55°C～125°C, power supply voltage cover 0.9 V±10%, bit error rate is less than 1E-12.
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表 1 判定CTLE均衡情况表
d(n–1) p(n–1) d(n) $\Delta $(n) 状态 –1 –1 1 –1 欠均衡 –1 1 1 1 过均衡 1 –1 –1 1 过均衡 1 1 –1 –1 欠均衡 
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表 2 不同pattern对眼图的影响
pattern 眼高(mV) 眼宽(ps) 确定性
抖动(ps)随机性
抖动(ps)PRBS7 174 46.8 3.1 0.94 PRBS15 156 45.1 3.2 0.95 PRBS23 147 44.7 3.3 0.98 PRBS31 143 43.8 3.5 1.00
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表 3 近年来学者研究成果对比
文献[15]* 文献[16] 文献[17] 本文 工艺 65 nm 40 nm 28 nm 28 nm 电源电压 1.05 V 1.2 V 0.92 V 0.81～0.99 V 工作温度 -- -- -- –55～125°C 传输速率 5～15 Gbit/s 16 Gbit/s 5～28 Gbit/s 1.25～16 Gbit/s 信道插损 24 dB@7.5 GHz 34 dB@8 GHz 15 dB@14 GHz 29 dB@8 GHz 面积/lane 0.09 mm2 0.54 mm2 0.88 mm2 0.54 mm2 功耗/lane 75 mW 235 mW 242.3 mW 153.7 mW *：只研究了TX+RX各项参数
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