基于磁性传感器的低失调温度补偿接口电路设计

樊华; 常伟鹏; 王策; 李国; 刘建明; 李宗霖; 魏琦; 冯全源

doi:10.11999/JEIT230601

基于磁性传感器的低失调温度补偿接口电路设计

doi: 10.11999/JEIT230601

樊华^{1, 2, 3},
常伟鹏²,
王策⁴,
李国⁴,
刘建明⁴,
李宗霖⁴,
魏琦^5, ,,
冯全源⁶

1.
电子科技大学重庆微电子产业技术研究院重庆 401331
2.
电子科技大学集成电路科学与工程学院(示范性微电子学院) 成都 611731
3.
电子科技大学广东电子信息工程研究院东莞 523808
4.
成都华微电子科技股份有限公司成都 610041
5.
清华大学精密仪器系北京 100084
6.
西南交通大学信息科学与技术学院成都 611756

基金项目: 国家自然科学基金(62371109, 62090012)，重庆市自然科学基金(2022NSCQ-MSX5348)，中央高校基本科研业务费专项资金(ZYGX2021YGLH203)，广东省基础与应用基础研究基金(2023A1515010041)，四川省科技计划(2022YFG0164)

详细信息

作者简介:
樊华：女，博士，教授，博士生导师，研究方向为高端传感器芯片设计、高精度数据转换器芯片设计

常伟鹏：男，硕士生，研究方向为集成电路工程

王策：男，硕士，研究员，研究方向为集成电路测试

李国：男，硕士，高级工程师，副总工程师，博士生导师，研究方向为高性能集成电路设计

刘建明：男，硕士，研究方向为集成电路的设计、应用和测试

李宗霖：男，硕士，研究方向为集成电路芯片设计

魏琦：男，博士，副研究员，研究方向为MEMS惯性传感器、专用集成电路设计和高性能数据转换器

冯全源：男，博士，教授，博士生导师，研究方向为模拟集成电路芯片设计、面向通信的超宽频带多模可编程射频芯片研发等

通讯作者:
魏琦　weiqi@tsinghua.edu.cn

中图分类号: TN43
计量
- 文章访问数: 393
- HTML全文浏览量: 276
- PDF下载量: 54
- 被引次数: 0
出版历程
- 收稿日期: 2023-06-16
- 修回日期: 2023-09-22
- 网络出版日期: 2023-09-28
- 刊出日期: 2024-04-24

Design of Low Offset Temperature Compensation Interface Circuit Based on Magnetic Sensor

FAN Hua^{1, 2, 3},
CHANG Weipeng²,
WANG Ce⁴,
LI Guo⁴,
LIU Jianming⁴,
LI Zonglin⁴,
WEI Qi^{5
, ,},
FENG Quanyuan⁶

1.
Chongqing Institute of Microelectronics Industry Technology, UESTC, Chongqing 401331, China
2.
School of Integrated Circuit Science and Engineering, University of Electronic Science And Technology of China, Chengdu 611731, China
3.
Guangdong Institute of Electronic Information Engineering, UESTC, Dongguan 523808, China
4.
Chengdu Sino Microelectronics Technology Co., Ltd., Chengdu 610041, China
5.
Department of Precision Instrument, Tsinghua University, Beijing 100084, China
6.
School of Information Science and Technology, Southwest Jiaotong University, Chengdu 611756, China

Funds: The National Natural Science Foundation of China (62371109, 62090012), The Natural Science Foundation of Chongqing (2022NSCQ-MSX5348), Fundamental Research Funds for the Central Universities (ZYGX2021YGLH203), Guangdong Basic and Applied Basic Research Foundation (2023A1515010041), Sichuan Provincial Science and Technology Plan (2022YFG0164)

摘要

摘要: 面向磁性传感器在物联网(IoT)技术中的广泛应用，该文基于180 nm CMOS工艺设计了一种具有低失调电压，低温度漂移特性的霍尔传感器接口电路。针对霍尔传感器灵敏度的温度漂移特性，该文设计了一种感温电路并与查表法相结合，调节可编程增益放大器 (PGA) 的增益有效地降低了霍尔传感器的温度系数 (TC)。在此基础上，通过在信号主通路中使用相关双采样 (CDS) 技术，极大程度上消除了霍尔传感器的失调电压。仿真结果表明，在–40°C～125°C温度范围内，霍尔传感器的TC从966.4 ppm/°C减小到了58.1 ppm/°C。信号主通路的流片结果表明，霍尔传感器的失调电压从25 mV左右减小到了4 mV左右，霍尔传感器的非线性误差为0.50%。芯片的总面积为0.69 mm²。
- 霍尔传感器 /
- 接口电路 /
- 温度补偿 /
- 低失调电压
Abstract: Considering the widespread application of magnetic sensors in the Internet of Things (IoT), a Hall sensor readout interface circuit with low offset voltage and low-temperature drift characteristics based on a 180 nm CMOS process is designed in this work. In response to the temperature drift characteristic of the Hall sensor sensitivity, a temperature sensing circuit that is combined with the table lookup method to adjust the gain of the Programmable Gain Amplifier (PGA) is designed, which effectively reduces the Temperature Coefficient (TC) of the Hall sensor. On this basis, the offset voltage of the Hall sensor is greatly eliminated by the use of Correlated Double Sampling (CDS) technology in the main signal channel. The simulation results show that the TC of the Hall sensor is decreased from 966.4 ppm/°C to 58.1 ppm/°C in the temperature range of –40°C～125°C. The chip measurement results of the main signal channel show that the offset voltage of the Hall sensor is reduced from about 25 mV to about 4 mV and the nonlinear error of the Hall sensor is 0.50%, which occupies an active area of 0.69 mm².
- Hall sensor /
- Readout interface circuit /
- Temperature compensation /
- Low offset voltage

HTML全文

图 1 恒定电流偏置下的霍尔传感器

下载: 全尺寸图片幻灯片

图 2 常见的水平型霍尔传感器结构

下载: 全尺寸图片幻灯片

图 3 霍尔电压的温度特性

下载: 全尺寸图片幻灯片

图 4 整体电路结构框图

下载: 全尺寸图片幻灯片

图 5 带隙基准

下载: 全尺寸图片幻灯片

图 6 带隙基准电路仿真结果

下载: 全尺寸图片幻灯片

图 7 感温电路

下载: 全尺寸图片幻灯片

图 8 感温电路仿真结果

下载: 全尺寸图片幻灯片

图 9 PGA

下载: 全尺寸图片幻灯片

图 10 温度补偿电路仿真结果

下载: 全尺寸图片幻灯片

图 11 旋转电流电路

下载: 全尺寸图片幻灯片

图 12 旋转电流电路仿真结果

下载: 全尺寸图片幻灯片

图 13 芯片显微镜照片

下载: 全尺寸图片幻灯片

图 14 测试示意图

下载: 全尺寸图片幻灯片

图 15 霍尔传感器线性度拟合图线

下载: 全尺寸图片幻灯片

表 1 各信号对温度的相应

温度范围 (°C)	V_temp范围(V)	temp<7:0>	V_H (mV)	增益
–40～–39.21	1.792～1.806	1001 0110	4.76	31
–20.35～–18.79	1.968～1.982	1010 0011	4.35	35
–1.49～0.07	2.144～2.158	1010 1111	4.06	37
39.36～40.92	2.494～2.508	1100 1001	3.71	40
59.79～61.35	2.668～2.682	1101 0110	3.70	40
78.65～80.21	2.842～2.856	1110 0010	3.79	40
119.52～121.08	3.189～3.203	1111 1100	4.27	35
124.22～125	3.232～3.246	1111 1111	4.35	34

下载: 导出CSV

表 2 V_off的高低温测试结果(mV)

	–40°C	–20°C	0°C	20°C	40°C
V_off1	49.59	42.21	33.05	21.94	11.75
V_off2	72.45	53.87	30.74	20.39	11.32
V_off3	69.15	50.92	33.75	23.05	12.26

下载: 导出CSV

表 3 CDS电路测试结果(mV)

	失调电压消除前	失调电压消除后
V_off1	24.9	4
V_off2	25.4	4
V_off3	24.2	2

下载: 导出CSV

表 4 本设计与相关工作性能对比

	本设计	文献[13]	文献[19]	文献[20]
工艺 (nm)	180	180	800	130
电源电压 (V)	5	5～18	5	3～5.5
功耗 (mW)	20.8	–	28	–
面积 (mm²)	0.69	5	0.95	1.12
TC (ppm/°C)	58.1	316	–	–

下载: 导出CSV

参考文献(20)

[1]	LOZANOVA S V and ROUMENIN C S. Silicon hall-effect multisensor[C]. 2020 XI National Conference with International Participation, Sofia, Bulgaria, 2020: 1–4.
[2]	CRESCENTINI M, SYEDA S F, and GIBIINO G P. Hall-effect current sensors: Principles of operation and implementation techniques[J]. IEEE Sensors Journal, 2022, 22(11): 10137–10151. doi: 10.1109/JSEN.2021.3119766.
[3]	DAS P T, NHALIL H, SCHULTZ M, et al. Detection of low-frequency magnetic fields down to sub-pT resolution with planar-hall effect sensors[J]. IEEE Sensors Letters, 2021, 5(1): 1500104. doi: 10.1109/LSENS.2020.3046632.
[4]	SPINELLI A S, MINOTTI P, LAGHI G, et al. Simple model for the performance of realistic AMR magnetic field sensors[C]. The 18th International Conference on Solid-State Sensors, Actuators and Microsystems, Anchorage, AK, 2015: 2204–2207.
[5]	HADJIGEORGIOU N, HRISTOFOROU E, and SOTIRIADIS P P. Closed-loop current-feedback, signal-chopped, low noise AMR sensor with high linearity[C]. The 6th International Conference on Modern Circuits and Systems Technologies, Thessaloniki, Greece, 2017: 1–4.
[6]	YAN Shaohua, ZHOU Zitong, YANG Yaodi, et al. Developments and applications of tunneling magnetoresistance sensors[J]. Tsinghua Science and Technology, 2022, 27(3): 443–454. doi: 10.26599/TST.2021.9010061.
[7]	BHASKARRAO N K, ANOOP C S, and DUTTA P K. A novel linearizing signal conditioner for half-bridge-based TMR angle sensor[J]. IEEE Sensors Journal, 2021, 21(3): 3216–3224. doi: 10.1109/JSEN.2020.3023089.
[8]	XU Xiaopeng, LIU Tingzhang, ZHU Min, et al. New small-volume high-precision TMR busbar DC current sensor[J]. IEEE Transactions on Magnetics, 2020, 56(2): 4000105. doi: 10.1109/TMAG.2019.2953671.
[9]	FU Peiyuan and ZHENG Feng. A new GMR sensor based on gradient magnetic field detection for DC and wide-band current measurement[C]. 2022 IEEE Region 10 Symposium, Mumbai, India, 2022: 1–6.
[10]	STETCO E M, AUREL POP O, and GRAMA A. Simulation model of a GMR based current sensor[C]. 2020 IEEE 26th International Symposium for Design and Technology in Electronic Packaging, Pitesti, Romania, 2020: 17–20.
[11]	RIPKA P and JANOSEK M. Advances in magnetic field sensors[J]. IEEE Sensors Journal, 2010, 10(6): 1108–1116. doi: 10.1109/JSEN.2010.2043429.
[12]	HALL E H. On a new action of the magnet on electric currents[J]. The London,Edinburgh,and Dublin Philosophical Magazine and Journal of Science, 1880, 9(55): 225–230. doi: 10.1080/14786448008626828.
[13]	蔚道嘉. 低噪声线性霍尔传感器的研究与设计[D]. [硕士论文], 西安电子科技大学, 2020. WEI Daojia. Research on and design of low noise linear hall sensor[D]. [Master dissertation], Xidian University, 2020.
[14]	胡杏杏. 电流模式的高灵敏度CMOS霍尔传感器研究与实现[D]. [硕士论文], 南京邮电大学, 2020. HU Xingxing. Research and implementation of high-sensitivity CMOS integrated hall sensor based on the current-mode[D]. [Master dissertation], Nanjing University of Posts and Telecommunications, 2020.
[15]	LEI Kameng, MAK P I, and MARTINS R P. A 0.45-V 3.3-µW resistor-based temperature sensor achieving 10mK resolution in 65-nm CMOS[C]. 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, Zhuhai, China, 2021: 127–128.
[16]	WANG Bo, LAW M K, and BERMAK A. A BJT-Based CMOS Temperature Sensor Achieving an Inaccuracy of ± 0.45°C (3σ) from –50°C to 180°C and a resolution-FoM of 7.2 pJ. K² at 150°C[C]. 2022 IEEE International Solid- State Circuits Conference, San Francisco, USA, 2022: 72–74.
[17]	TANG Zhong, FANG Yun, YU Xiaopeng, et al. A 1-V diode-based temperature sensor with a resolution FoM of 3.1pJ·K² in 55nm CMOS[C]. 2021 IEEE Custom Integrated Circuits Conference, Austin, USA, 2021: 1–2.
[18]	PAUN M A, SALLESE J M, and KAYAL M. Temperature considerations on Hall Effect sensors current-related sensitivity behaviour[C]. The 19th IEEE International Conference on Electronics, Circuits, and Systems, Seville, Spain, 2012: 201–204.
[19]	CHEN Xiaoqing, XU Yue, XIE Xiaopeng, et al. A novel Hall dynamic offset cancellation circuit based on four-phase spinning current technique[C]. 2015 China Semiconductor Technology International Conference, Shanghai, China, 2015: 1–3.
[20]	KEIL M, JANSCHITZ J G, and MOTZ M. A Hall effect magnetic sensor with ratiometric output, utilizing a self-regulating chopped amplifier for compensation of offset, temperature and lifetime drift effects[C]. 2022 Austrochip Workshop on Microelectronics, Villach, Austria, 2022: 1–4.