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基于磁性传感器的低失调温度补偿接口电路设计

樊华 常伟鹏 王策 李国 刘建明 李宗霖 魏琦 冯全源

樊华, 常伟鹏, 王策, 李国, 刘建明, 李宗霖, 魏琦, 冯全源. 基于磁性传感器的低失调温度补偿接口电路设计[J]. 电子与信息学报, 2024, 46(4): 1521-1528. doi: 10.11999/JEIT230601
引用本文: 樊华, 常伟鹏, 王策, 李国, 刘建明, 李宗霖, 魏琦, 冯全源. 基于磁性传感器的低失调温度补偿接口电路设计[J]. 电子与信息学报, 2024, 46(4): 1521-1528. doi: 10.11999/JEIT230601
FAN Hua, CHANG Weipeng, WANG Ce, LI Guo, LIU Jianming, LI Zonglin, WEI Qi, FENG Quanyuan. Design of Low Offset Temperature Compensation Interface Circuit Based on Magnetic Sensor[J]. Journal of Electronics & Information Technology, 2024, 46(4): 1521-1528. doi: 10.11999/JEIT230601
Citation: FAN Hua, CHANG Weipeng, WANG Ce, LI Guo, LIU Jianming, LI Zonglin, WEI Qi, FENG Quanyuan. Design of Low Offset Temperature Compensation Interface Circuit Based on Magnetic Sensor[J]. Journal of Electronics & Information Technology, 2024, 46(4): 1521-1528. doi: 10.11999/JEIT230601

基于磁性传感器的低失调温度补偿接口电路设计

doi: 10.11999/JEIT230601
基金项目: 国家自然科学基金(62371109, 62090012),重庆市自然科学基金(2022NSCQ-MSX5348),中央高校基本科研业务费专项资金(ZYGX2021YGLH203),广东省基础与应用基础研究基金(2023A1515010041),四川省科技计划(2022YFG0164)
详细信息
    作者简介:

    樊华:女,博士,教授,博士生导师,研究方向为高端传感器芯片设计、高精度数据转换器芯片设计

    常伟鹏:男,硕士生,研究方向为集成电路工程

    王策:男,硕士,研究员,研究方向为集成电路测试

    李国:男,硕士,高级工程师,副总工程师,博士生导师,研究方向为高性能集成电路设计

    刘建明:男,硕士,研究方向为集成电路的设计、应用和测试

    李宗霖:男,硕士,研究方向为集成电路芯片设计

    魏琦:男,博士,副研究员,研究方向为MEMS惯性传感器、专用集成电路设计和高性能数据转换器

    冯全源:男,博士,教授,博士生导师,研究方向为模拟集成电路芯片设计、面向通信的超宽频带多模可编程射频芯片研发等

    通讯作者:

    魏琦 weiqi@tsinghua.edu.cn

  • 中图分类号: TN43

Design of Low Offset Temperature Compensation Interface Circuit Based on Magnetic Sensor

Funds: The National Natural Science Foundation of China (62371109, 62090012), The Natural Science Foundation of Chongqing (2022NSCQ-MSX5348), Fundamental Research Funds for the Central Universities (ZYGX2021YGLH203), Guangdong Basic and Applied Basic Research Foundation (2023A1515010041), Sichuan Provincial Science and Technology Plan (2022YFG0164)
  • 摘要: 面向磁性传感器在物联网(IoT)技术中的广泛应用,该文基于180 nm CMOS工艺设计了一种具有低失调电压,低温度漂移特性的霍尔传感器接口电路。针对霍尔传感器灵敏度的温度漂移特性,该文设计了一种感温电路并与查表法相结合,调节可编程增益放大器 (PGA) 的增益有效地降低了霍尔传感器的温度系数 (TC)。在此基础上,通过在信号主通路中使用相关双采样 (CDS) 技术,极大程度上消除了霍尔传感器的失调电压。仿真结果表明,在–40°C~125°C温度范围内,霍尔传感器的TC从966.4 ppm/°C减小到了58.1 ppm/°C。信号主通路的流片结果表明,霍尔传感器的失调电压从25 mV左右减小到了4 mV左右,霍尔传感器的非线性误差为0.50%。芯片的总面积为0.69 mm2
  • 图  1  恒定电流偏置下的霍尔传感器

    图  2  常见的水平型霍尔传感器结构

    图  3  霍尔电压的温度特性

    图  4  整体电路结构框图

    图  5  带隙基准

    图  6  带隙基准电路仿真结果

    图  7  感温电路

    图  8  感温电路仿真结果

    图  9  PGA

    图  10  温度补偿电路仿真结果

    图  11  旋转电流电路

    图  12  旋转电流电路仿真结果

    图  13  芯片显微镜照片

    图  14  测试示意图

    图  15  霍尔传感器线性度拟合图线

    表  1  各信号对温度的相应

    温度范围 (°C)Vtemp范围(V)temp<7:0>VH (mV)增益
    –40~–39.211.792~1.8061001 01104.7631
    –20.35~–18.791.968~1.9821010 00114.3535
    –1.49~0.072.144~2.1581010 11114.0637
    39.36~40.922.494~2.5081100 10013.7140
    59.79~61.352.668~2.6821101 01103.7040
    78.65~80.212.842~2.8561110 00103.7940
    119.52~121.083.189~3.2031111 11004.2735
    124.22~1253.232~3.2461111 11114.3534
    下载: 导出CSV

    表  2  Voff的高低温测试结果(mV)

    –40°C–20°C0°C20°C40°C
    Voff149.5942.2133.0521.9411.75
    Voff272.4553.8730.7420.3911.32
    Voff369.1550.9233.7523.0512.26
    下载: 导出CSV

    表  3  CDS电路测试结果(mV)

    失调电压消除前失调电压消除后
    Voff124.94
    Voff225.44
    Voff324.22
    下载: 导出CSV

    表  4  本设计与相关工作性能对比

    本设计文献[13]文献[19]文献[20]
    工艺 (nm)180180800130
    电源电压 (V)55~1853~5.5
    功耗 (mW)20.828
    面积 (mm2)0.6950.951.12
    TC (ppm/°C)58.1316
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-06-16
  • 修回日期:  2023-09-22
  • 网络出版日期:  2023-09-28
  • 刊出日期:  2024-04-24

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