Single Event Transient Analysis and Hardening in a Low-Dropout Regulator
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摘要: 随着集成电路特征尺寸的不断缩减，CMOS集成电路的单粒子效应问题越来越严重。为了提高低压差线性稳压器(LDO)的单粒子瞬态(SET)效应加固效果，该文通过SPICE电路仿真和重离子实验研究了一种28 nm CMOS工艺LDO的SET失效机制，并研究了关键器件尺寸大小对SET脉冲的影响，提出一种有效的LDO加固方法。SPICE电路仿真发现这种LDO的敏感节点主要位于误差放大器(EA)内部。功率管(MOSFET)栅极节点的环路滤波电容会明显地影响单粒子瞬态脉冲的幅度，也会轻微地影响单粒子瞬态脉冲的宽度。误差放大器内部关键节点的器件尺寸会影响稳压器输出的单粒子瞬态脉冲的幅度和宽度。通过增加功率管(MOSFET)栅极节点电容和调整误差放大器内部相关节点器件尺寸的方法对LDO进行了SET加固设计。电路仿真和重离子实验结果表明这种加固方法能够有效地降低LDO输出的单粒子瞬态脉冲的幅度和宽度。
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关键词:
- 单粒子瞬态 /
- 低压差线性稳压器 /
- 重离子实验 /
- SPICE电路仿真 /
- 28 nm CMOS工艺
Abstract: As the feature size of integrated circuits scales down, the problem of the Single Event Transients (SET) in CMOS integrated circuits is becoming more and more serious. In order to improve the hardening effect of the Low-DropOut regulators (LDO), the mechanism of the SET in a LDO fabricated on 28 nm CMOS technology is studied by SPICE circuit simulation and heavy ion experiment. The influence of the size of the key components on the SET in LDO is also studied. The hardening methods for LDO is proposed. The SPICE circuit simulation results show that the most sensitive nodes are located in the Error Amplifier (EA). The equivalent capacitance on the gate node of the power MOSFET can significantly influence the amplitude of the single event transients and slightly influence the width. The size of the relevant devices in the error amplifier can influence both amplitude and width of the SETs. The LDO is hardened by adding the capacitance on the gate node of power MOSFET and adjusting the size of the relevant devices in the error amplifier. The results of the simulation and the experiment show that the hardening method can significantly decrease the amplitude and width of the SETs. -
表 1 重离子参数
粒子种类 能量(MeV) 射程(μm) LET(MeV·cm2/mg) Cl 150 42.8 13.4 Ti 165 33.9 22.0 Ge 208 30.3 37.3 U 700 41.0 45.0 
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表 2 C1的值和器件长宽比对LDO功耗的影响
器件宽度 SET宽
度(ns)SET幅
度(mV)EA电源
电流(µA)(W/L)5=2, (W/L)7=2 160 174 49.1 (W/L)5=8, (W/L)7=2 170 272 49.1 (W/L)5=2, (W/L)7=8 100 172 51.6 (W/L)5=8, (W/L)7=8 100 264 51.6
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