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一种压电驱动单屏蔽电极3维电场传感芯片

彭思敏 夏善红 刘向明 高雅浩 张洲威 张巍 邢学斌 刘语斐 毋正伟 彭春荣

彭思敏, 夏善红, 刘向明, 高雅浩, 张洲威, 张巍, 邢学斌, 刘语斐, 毋正伟, 彭春荣. 一种压电驱动单屏蔽电极3维电场传感芯片[J]. 电子与信息学报, 2024, 46(4): 1513-1520. doi: 10.11999/JEIT230361
引用本文: 彭思敏, 夏善红, 刘向明, 高雅浩, 张洲威, 张巍, 邢学斌, 刘语斐, 毋正伟, 彭春荣. 一种压电驱动单屏蔽电极3维电场传感芯片[J]. 电子与信息学报, 2024, 46(4): 1513-1520. doi: 10.11999/JEIT230361
PENG Simin, XIA Shanhong, LIU Xiangming, GAO Yahao, ZHANG Zhouwei, ZHANG Wei, XING Xuebin, LIU Yufei, WU Zhengwei, PENG Chunrong. Three-dimensional Electric Field Sensing Chip Via Piezoelectric Actuation in a Single Shielding Electrode[J]. Journal of Electronics & Information Technology, 2024, 46(4): 1513-1520. doi: 10.11999/JEIT230361
Citation: PENG Simin, XIA Shanhong, LIU Xiangming, GAO Yahao, ZHANG Zhouwei, ZHANG Wei, XING Xuebin, LIU Yufei, WU Zhengwei, PENG Chunrong. Three-dimensional Electric Field Sensing Chip Via Piezoelectric Actuation in a Single Shielding Electrode[J]. Journal of Electronics & Information Technology, 2024, 46(4): 1513-1520. doi: 10.11999/JEIT230361

一种压电驱动单屏蔽电极3维电场传感芯片

doi: 10.11999/JEIT230361
基金项目: 国家自然科学基金(62031025, 61971398),国家重点研发计划(2022YFB3207300, 2021YFB2011700),中国科学院科研仪器设备研制项目(YJKYYQ20200026, GJJSTD20210004)
详细信息
    作者简介:

    彭思敏:女,博士生,研究方向为单芯片MEMS 3维电场传感器

    夏善红:女,博士,研究员,研究方向为传感器与微系统技术

    刘向明:男,博士生,研究方向为高灵敏度的MEMS电场传感器

    高雅浩:男,博士生,研究方向为高灵敏度的MEMS电场传感器

    张洲威:男,硕士生,研究方向为MEMS电场传感器宽频带电场检测方法

    张巍:男,博士生,研究方向为MEMS电场传感器积累电荷消除

    邢学斌:男,硕士生,研究方向为一体化MEMS 3维电场探空仪技术

    刘语斐:女,硕士生,研究方向为模态局域化MEMS电场传感器

    毋正伟:男,博士,高级工程师,研究方向为MEMS谐振式微传感器研制及其真空封装技术

    彭春荣:男,博士,研究员,研究方向为MEMS电场传感器芯片及系统

    通讯作者:

    夏善红 shxia@mail.ie.ac.cn

  • 中图分类号: TN4; TP212

Three-dimensional Electric Field Sensing Chip Via Piezoelectric Actuation in a Single Shielding Electrode

Funds: The National Natural Science Foundation of China (62031025, 61971398), The National Key R&D Program of China (2022YFB3207300, 2021YFB2011700), The Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20200026, GJJSTD20210004)
  • 摘要: 为降低激励电压和串扰噪声,实现高灵敏3维电场检测,该文提出一种压电驱动单屏蔽电极3维电场传感芯片。其敏感结构由1组可动屏蔽电极和4组固定感应电极构成,固定感应电极两两对称,在压电驱动结构作用下可动屏蔽电极垂直振动,4组感应电极在待测电场作用下产生周期性的感应电流,通过测量4组感应电极的感应电流,并经过差分求和解耦方法可分别获得x,y,z坐标轴方向的电场分量。该文通过有限元仿真设计了3维电场传感芯片结构,分析了其测量的可行性,对关键结构参数进行优化设计,并设计了敏感芯片加工工艺流程。对研制的芯片进行了实验测试,结果表明,单屏蔽电极3维电场传感芯片在0~50 kV/m电场强度范围内,x,y,z 3轴输出灵敏度分别为0.2214 mV/(kV/m), 0.3580 mV/(kV/m), 2.1768 mV/(kV/m),3维电场的最大测量误差小于5.3%。
  • 图  1  单屏蔽电极3维电场传感芯片结构示意图

    图  2  传感芯片工作原理示意图

    图  3  4组感应电极感应电荷变化量与屏蔽电极位移关系图

    图  4  单位长度上电荷变化量B随电极宽度wi和电极间距g变化的关系

    图  5  感应电荷变化量随弹性层厚度变化关系

    图  6  双端固支压电梁最大稳态位移随压电层长度和宽度变化关系

    图  7  电场敏感芯片实物照片和扫描电镜照片

    图  8  实验测试装置示意图

    图  9  单屏蔽电极3维电场传感芯片单轴标定

    表  1  传感器关键结构参数

    关键结构参数参数值
    敏感电极宽度wi5 μm
    屏蔽电极宽度ws5 μm
    敏感电极长度li620 μm
    屏蔽电极长度ls620 μm
    相邻感应电极与屏蔽电极间距g5 μm
    工作电极长度l600 μm
    SOI器件层厚度he5 μm
    压电层厚度hp0.5 μm
    压电层长度lp800 μm
    压电层宽度wp50 μm
    驱动电极组数4
    下载: 导出CSV

    表  2  3维电场传感芯片的灵敏度(mV/(kV/m))

    电场方向x轴输出灵敏度y轴输出灵敏度z轴输出灵敏度
    沿x0.22140.02180.0420
    沿y0.01000.35800.0057
    沿z0.05840.04232.1768
    下载: 导出CSV

    表  3  3维电场传感芯片在空间作不同角度旋转时的输出信号与合成电场

    旋转角度施加电场(kV/m)Vxout (mV)Vyout (mV)Vzout (mV)合成电场(kV/m)误差(%)
    角度1201.1710.02544.04720.371.85
    402.2970.86787.50340.270.68
    角度2200.8345.09033.30219.741.30
    401.70810.18066.29439.351.63
    角度3203.3305.35022.33020.241.20
    406.62010.64044.43040.250.62
    角度4204.7401.47020.20021.055.25
    409.4402.94040.25041.924.80
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-05-04
  • 修回日期:  2023-06-30
  • 网络出版日期:  2023-07-06
  • 刊出日期:  2024-04-24

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