一种压电驱动单屏蔽电极3维电场传感芯片

彭思敏; 夏善红; 刘向明; 高雅浩; 张洲威; 张巍; 邢学斌; 刘语斐; 毋正伟; 彭春荣

doi:10.11999/JEIT230361

一种压电驱动单屏蔽电极3维电场传感芯片

doi: 10.11999/JEIT230361

彭思敏^{1, 2},
夏善红^1, ,,
刘向明^{1, 2},
高雅浩^{1, 2},
张洲威^{1, 2},
张巍^{1, 2},
邢学斌^{1, 2},
刘语斐^{1, 2},
毋正伟¹,
彭春荣¹

1.
中国科学院空天信息创新研究院传感技术联合国家重点实验室北京 100190
2.
中国科学院大学电子电气与通信工程学院北京 100049

基金项目: 国家自然科学基金(62031025, 61971398)，国家重点研发计划(2022YFB3207300, 2021YFB2011700)，中国科学院科研仪器设备研制项目(YJKYYQ20200026, GJJSTD20210004)

详细信息

作者简介:
彭思敏：女，博士生，研究方向为单芯片MEMS 3维电场传感器

夏善红：女，博士，研究员，研究方向为传感器与微系统技术

刘向明：男，博士生，研究方向为高灵敏度的MEMS电场传感器

高雅浩：男，博士生，研究方向为高灵敏度的MEMS电场传感器

张洲威：男，硕士生，研究方向为MEMS电场传感器宽频带电场检测方法

张巍：男，博士生，研究方向为MEMS电场传感器积累电荷消除

邢学斌：男，硕士生，研究方向为一体化MEMS 3维电场探空仪技术

刘语斐：女，硕士生，研究方向为模态局域化MEMS电场传感器

毋正伟：男，博士，高级工程师，研究方向为MEMS谐振式微传感器研制及其真空封装技术

彭春荣：男，博士，研究员，研究方向为MEMS电场传感器芯片及系统

通讯作者:
夏善红　shxia@mail.ie.ac.cn

中图分类号: TN4; TP212
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- 文章访问数: 176
- HTML全文浏览量: 96
- PDF下载量: 23
- 被引次数: 0
出版历程
- 收稿日期: 2023-05-04
- 修回日期: 2023-06-30
- 网络出版日期: 2023-07-06
- 刊出日期: 2024-04-24

Three-dimensional Electric Field Sensing Chip Via Piezoelectric Actuation in a Single Shielding Electrode

PENG Simin^{1, 2},
XIA Shanhong^{1
, ,},
LIU Xiangming^{1, 2},
GAO Yahao^{1, 2},
ZHANG Zhouwei^{1, 2},
ZHANG Wei^{1, 2},
XING Xuebin^{1, 2},
LIU Yufei^{1, 2},
WU Zhengwei¹,
PENG Chunrong¹

1.
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Science, Beijing 100190, China
2.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funds: The National Natural Science Foundation of China (62031025, 61971398), The National Key R＆D Program of China (2022YFB3207300, 2021YFB2011700), The Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20200026, GJJSTD20210004)

摘要

摘要: 为降低激励电压和串扰噪声，实现高灵敏3维电场检测，该文提出一种压电驱动单屏蔽电极3维电场传感芯片。其敏感结构由1组可动屏蔽电极和4组固定感应电极构成，固定感应电极两两对称，在压电驱动结构作用下可动屏蔽电极垂直振动，4组感应电极在待测电场作用下产生周期性的感应电流，通过测量4组感应电极的感应电流，并经过差分求和解耦方法可分别获得x,y,z坐标轴方向的电场分量。该文通过有限元仿真设计了3维电场传感芯片结构，分析了其测量的可行性，对关键结构参数进行优化设计，并设计了敏感芯片加工工艺流程。对研制的芯片进行了实验测试，结果表明，单屏蔽电极3维电场传感芯片在0～50 kV/m电场强度范围内，x,y,z 3轴输出灵敏度分别为0.2214 mV/(kV/m), 0.3580 mV/(kV/m), 2.1768 mV/(kV/m)，3维电场的最大测量误差小于5.3%。
- 单屏蔽电极 /
- 3维 /
- 电场 /
- 垂直振动
Abstract: A three-dimensional electric field sensing chip equipped with a single shielding electrode and piezoelectric actuation is proposed. This design achieves high-sensitivity detection of the three-dimensional electric fields, simultaneously reducing excitation voltage and crosstalk noise is proposed. The sensing structure comprises one group of shielding electrodes and four sets of symmetrically distributed sensing electrodes. In response to piezoelectric actuation, the shielding electrodes undergo vertical vibrations, while the four sensing electrode sets generate induced currents when subjected to external electric fields. A differential decoupling method can be used to calculate the signals corresponding to the electric field components along the x-, y-, and z-axes. Finite element simulation was conducted to design the structure of the three-dimensional electric field sensing chip, analyze the feasibility of its measurement, and optimize key structural parameters. The fabrication process for the sensing chip was designed and implemented. Experimental results reveal that the output sensitivities are 0.2214 mV/(kV/m) for the x-axis, 0.3580 mV/(kV/m) for the y-axis, and 2.1768 mV/(kV/m) for the z-axis. The maximum measurement error for the three-dimensional electric fields remains < 5.3%.
- Single shielding electrode /
- Three-dimensional /
- Electric field /
- Vertical vibration

HTML全文

图 1 单屏蔽电极3维电场传感芯片结构示意图

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图 2 传感芯片工作原理示意图

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图 3 4组感应电极感应电荷变化量与屏蔽电极位移关系图

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图 4 单位长度上电荷变化量B随电极宽度w_i和电极间距g变化的关系

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图 5 感应电荷变化量随弹性层厚度变化关系

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图 6 双端固支压电梁最大稳态位移随压电层长度和宽度变化关系

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图 7 电场敏感芯片实物照片和扫描电镜照片

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图 8 实验测试装置示意图

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图 9 单屏蔽电极3维电场传感芯片单轴标定

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表 1 传感器关键结构参数

关键结构参数	参数值
敏感电极宽度w_i	5 μm
屏蔽电极宽度w_s	5 μm
敏感电极长度l_i	620 μm
屏蔽电极长度l_s	620 μm
相邻感应电极与屏蔽电极间距g	5 μm
工作电极长度l	600 μm
SOI器件层厚度h_e	5 μm
压电层厚度h_p	0.5 μm
压电层长度l_p	800 μm
压电层宽度w_p	50 μm
驱动电极组数	4

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表 2 3维电场传感芯片的灵敏度(mV/(kV/m))

电场方向	x轴输出灵敏度	y轴输出灵敏度	z轴输出灵敏度
沿x轴	0.2214	0.0218	0.0420
沿y轴	0.0100	0.3580	0.0057
沿z轴	0.0584	0.0423	2.1768

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表 3 3维电场传感芯片在空间作不同角度旋转时的输出信号与合成电场

旋转角度	施加电场(kV/m)	V_xout (mV)	V_yout (mV)	V_zout (mV)	合成电场(kV/m)	误差(%)
角度1	20	1.171	0.025	44.047	20.37	1.85
	40	2.297	0.867	87.503	40.27	0.68
角度2	20	0.834	5.090	33.302	19.74	1.30
	40	1.708	10.180	66.294	39.35	1.63
角度3	20	3.330	5.350	22.330	20.24	1.20
	40	6.620	10.640	44.430	40.25	0.62
角度4	20	4.740	1.470	20.200	21.05	5.25
	40	9.440	2.940	40.250	41.92	4.80

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