一种灵敏度漂移自补偿型MEMS电场传感器

储昭志; 杨鹏飞; 闻小龙; 彭春荣; 刘宇涛; 吴双

doi:10.11999/JEIT220882

一种灵敏度漂移自补偿型MEMS电场传感器

doi: 10.11999/JEIT220882

1.
中国科学院微电子研究所北京 100029
2.
北京信息科技大学北京 100192
3.
北京科技大学北京 100083
4.
中国科学院空天信息创新研究院传感技术国家重点实验室北京 100094
5.
北京中科飞龙传感技术有限责任公司北京 100089

基金项目: 国家重点研发计划(2021YFB2011700)，国家自然科学基金(62001472，62101054)，北京市教育委员会科学研究计划项目(KM202211232005)

详细信息

作者简介:
储昭志：男，助理研究员，研究方向为MEMS与微加工、微型电场传感器及其应用

杨鹏飞：男，副教授，研究方向为微传感器与微系统、新型电学量传感器、低频电场探测

闻小龙：男，副教授，研究方向为微传感器与微系统、电场传感器、磁场传感器

彭春荣：男，研究员，研究方向为微传感器与微系统、新型电学量传感器及应用

刘宇涛：男，工程师，研究方向为微系统集成技术

吴双：男，工程师，研究方向为电场探测技术及其应用

通讯作者:
杨鹏飞　pfy@bistu.edu.cn

中图分类号: TP212.1
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出版历程
- 收稿日期: 2022-07-01
- 修回日期: 2022-11-14
- 网络出版日期: 2022-11-16
- 刊出日期: 2023-08-21

A MEMS-based Electric Field Sensor with Self-compensation for Sensitivity Drift

1.
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
2.
Beijing Information Science and Technology University, Beijing 100192, China
3.
University of Science and Technology Beijing, Beijing 100083, China
4.
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China
5.
Beijing Tflying Transducer Technology Co., Ltd., Beijing 100089, China

Funds: The National Key R&D Program of China (2021YFB2011700), The National Natural Science Foundation of China (62001472, 62101054), The R&D Program of Beijing Municipal Education Commission (KM202211232005)

摘要

摘要: 针对温度和应力变化带来的电场传感器灵敏度漂移和测量误差问题，该文提出一种具有灵敏度漂移自补偿功能的微机电系统(MEMS)谐振式电场传感器。传感器结构中，感应电极用于测量外部电场，参考电极用于监测可动结构振动信息；基于振动相位和锁相环技术实现传感器谐振频率自动跟踪，利用参考电极输出信号对感应电极输出信号进行实时补偿，提高传感器灵敏度的稳定性。该文开展了敏感结构设计和理论分析，研制出传感器样机，并进行了样机标定测试。测试结果表明，在±18 kV/m电场范围内，传感器线性度达到0.21%，3个往返行程总不确定度达到1.34%；在–40°C～70°C温度范围内，灵敏度相对漂移量小于3.0%，具有良好的灵敏度漂移自补偿效果。
- 微机电系统 /
- 电场传感器 /
- 灵敏度漂移 /
- 温度补偿
Abstract: To reduce the sensitivity drift caused by working temperature and structural parameters change, an electric field sensor with self-compensation based on Micro-Electro-Mechanical System (MEMS) is proposed. The sensor structure includes the sensing electrodes for measuring the external electric field and the reference electrodes for monitoring the movable structure vibration. With the reference electrodes output, this sensor can track the resonant frequency automatically, and correct the sensing output in real time. Experimental results show that this sensor can achieve a linearity of 0.21% and an accuracy of 1.34% in the electric field range of –18～+18 kV/m, and a less sensitivity drift within 3.0% in the temperature range of –40～70°C, realizing a good self-compensation performance.
- Micro-Electro-Mechanical System (MEMS) /
- Electric field sensor /
- Sensitivity drift /
- Temperature compensation

HTML全文

图 1 传感器敏感结构平面示意图

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图 2 传感器工作原理图

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图 3 参考电极结构示意图

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图 4 敏感芯片制备工艺流程

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图 5 敏感芯片的扫描电镜照片

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图 6 传感器电路框图

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图 7 传感器测试系统实物图

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图 8 1号传感器电场响应特性

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图 9 1号传感器谐振频率随温度变化特性

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图 10 1号传感器相对振幅随温度变化特性

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图 11 1号传感器灵敏度相对漂移量随温度变化特性

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表 1 传感器灵敏度相对漂移量随温度变化的测试结果(%)

温度(°C)	1号传感器		2号传感器		3号传感器		4号传感器		5号传感器		6号传感器
温度(°C)	未补偿	补偿后	未补偿	补偿后	未补偿	补偿后	未补偿	补偿后	未补偿	补偿后	未补偿	补偿后
–40	10.9	–0.5	12.1	–0.4	12.1	–0.2	12.8	0.7	8.1	–1.1	18.1	–0.9
–30	8.7	–1.0	9.4	–1.2	10.4	–0.2	10.4	0.0	6.7	–1.3	15.5	–0.2
–20	8.4	0.7	7.4	–1.0	7.8	–0.7	8.4	0.0	6.3	–0.2	10.3	1.0
–10	7.1	1.5	5.8	–0.3	5.6	–0.5	6.7	0.4	5.6	0.6	6.8	1.0
0	4.4	0.8	3.7	–0.2	3.6	–0.3	3.9	–0.1	3.7	0.4	5.2	1.3
10	1.4	–0.4	–1.2	–3.0	1.5	–0.5	2.4	0.4	1.2	–0.4	2.1	0.3
20	0	0	0	0	0	0	0	0	0	0	0	0
30	–1.5	0.4	–1.7	0.4	–1.1	1.1	–1.5	0.6	–1.7	–0.2	–1.2	0.6
40	–2.9	0.9	–3.1	1.0	–3.3	0.8	–5.1	–1.2	–3.8	–0.7	–3.9	0.3
50	–4.6	0.9	–5.4	0.6	–5.2	0.8	–8.1	–2.5	–5.4	–0.8	–5.9	0.4
60	–6.5	0.6	–7.0	0.8	–6.5	1.3	–9.3	–1.9	–7.4	–1.3	–9.2	–1.3
70	–8.4	0.3	–9.9	–0.4	–7.2	2.4	–11.4	–2.2	–9.8	–2.2	–10.9	–0.8

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表 2 传感器灵敏度相对漂移量的平均值及标准差(%)

		1号	2号	3号	4号	5号	6号
未补偿	平均值	1.4	0.8	1.5	0.8	0.3	2.2
未补偿	标准差	6.2	6.6	6.2	7.7	5.7	8.9
补偿后	平均值	0.4	–0.3	0.3	–0.5	–0.6	0.1
补偿后	标准差	0.7	1.0	0.9	1.1	0.8	0.8

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