面向可见光通信的硅基InGaN/GaN多量子阱多口分路器光子集成芯片

李欣; 王徐; 李芸; 沙源清; 蒋成伟; 王永进

doi:10.11999/JEIT210953

面向可见光通信的硅基InGaN/GaN多量子阱多口分路器光子集成芯片

doi: 10.11999/JEIT210953

李欣^{1, 2, ,},
王徐¹,
李芸¹,
沙源清¹,
蒋成伟¹,
王永进¹

1.
南京邮电大学通信与信息工程学院南京 210003
2.
南京邮电大学宽带无线通信与传感网技术教育部重点实验室南京 210003

基金项目: 中国博士后基金 (2018M640508)，南京邮电大学1311人才计划(1311)，南京邮电大学宽带无线通信与传感网技术教育部重点实验室开放研究基金(JZNY202109)

详细信息

作者简介:
李欣：女，1984年生，副教授，研究方向为可见光通信及氮化镓光电子器件

王徐：女，1998年生，硕士生，研究方向为可见光通信及氮化物光电子器件

李芸：女，1998年生，硕士生，研究方向为可见光通信及氮化物光电子器件

沙源清：男，1997年生，硕士生，研究方向为可见光通信及氮化物光电子器件

蒋成伟：男，1997年生，硕士生，研究方向为可见光通信及氮化物光电子器件

王永进：男，1977年生，教授，研究方向为下一代无线通信、新型光电子器件、信息功能材料及物联网

通讯作者:
李欣　lixin1984@njupt.edu.cn

中图分类号: TN256; TN929.1
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出版历程
- 收稿日期: 2021-09-08
- 修回日期: 2022-04-22
- 网络出版日期: 2022-04-28
- 刊出日期: 2022-08-17

Silicon-based InGaN/GaN Multi-quantum Wells Multi-port Splitter Photonic Integrated Chip for Visible Light Communication

1.
College of Telecommunications and Information, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
2.
Key Laboratory of Broadband Wireless Communication and Sensor Network Technology, Nanjing University of Posts and Telecommunications, Ministry of Education, Nanjing 210003, China

Funds: China Postdoctoral Science Foundation Funded Project (2018M640508), The Talent Program of Nanjing University of Posts and Telecommunications (1311), The Open Research Fund of Key Laboratory of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications), Ministry of Education (JZNY202109)

摘要

摘要: 为研究面向可见光通信的多功能光子集成芯片，实现可见光信号发射、探测、传输和功率分配的一体化的复合功能，该文提出一种基于硅基InGaN/GaN多量子阱材料的微型发光二极管(LED)多口分路器结构的光子集成芯片，对集成芯片进行了形貌、光电特性和可见光通信测试等多方面表征，实现了对可见光信号的有效传输和不同比例的多口功率分路，并对分路器不同端口的出射光强进行量化处理，最后，利用信号发生器在微型LED光源发射端加载300 kHz的矩形波电信号，收集分路器末端发射的调制可见光信号，输入/接收信号的波形变化趋势一致，说明该光子集成芯片可实现有效的可见光通信。该研究的主要目的是尝试性将可见光波段的光源和光电探测器集成在氮化物晶圆上，为可见光通信的全光网络的可见光信号片上集成式处理提供新的研究思路和方案，为发展面向可见光通信网络需求的复合功能光子集成芯片终端提供了更多可能性。
- 光子集成芯片 /
- 可见光通信 /
- 氮化镓 /
- 发光二极管 /
- 多口分路器
Abstract: In order to study the multi-functional photon integrated chip for visible light communication and realize the integrated function of visible light signal emission, detection, transmission and power distribution, a miniature Light Emitting Diode(LED) with splitter structure based on silicon-based InGaN/GaN multiple quantum well material is proposed in this paper. The photon integrated chip is characterized in many aspects, such as morphology, optoelectronic characteristics and visible light communication test. The effective transmission of visible light signal and different proportion of multi-port power shunt are realized, and the output light intensity of different ports of the splitter is quantified. Finally, the rectangular wave signal of 300 kHz is loaded at the emitter end of the miniature LED light source by the signal generator, and the modulated visible light signal emitted at the end of the splitter is collected. The waveform change trend of the input / receive signal is the same. It shows that the photonic integrated chip can achieve effective visible light communication. The main purpose of this study is to try to integrate visible light sources and photodetectors on nitride wafers, so as to provide new research ideas and schemes for on-chip integrated processing of visible light signals in all-optical networks of visible light communications. It provides more possibilities for the development of multi-function photon integrated chip terminals for visible light communication networks.
- Photonics integrated chips /
- Visible light communication /
- Gallium nitride /
- Light Emitting Diodes(LED) /
- Multi-port splitters

HTML全文

图 1 可见光信号在分路器结构中传输情况的仿真模型及仿真分析结果

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图 2 硅基InGaN/GaN多量子阱多口分路器光子集成芯片示意图

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图 3 硅基InGaN/GaN多量子阱多口分路器光子集成芯片加工工艺流程图

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图 4 硅基InGaN/GaN多量子阱多口分路器光子集成芯片的光学显微镜图

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图 5 多口分路器的扫描电子显微镜图

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图 6 多口分路器关键结构的原子力显微镜图

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图 7 发光器件的电致发光总光强

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图 8 硅基InGaN/GaN多量子阱多口分路器光子集成芯片在1～10 mA注入电流下的工作状态

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图 9 随注入电流变化的分路器不同端口的出射光强曲线

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图 10 光子集成芯片可见光通信测试的输入输出信号波形图

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表 1 本研究与部分已发表光子集成芯片指标对比

包含器件	功能	光信号波长	年份
无源光子器件	光功率分配	近红外光	2021^[13], 2018^[22]
无源光子器件	光信号传输	1550 nm	2021^[16], 2019^[17]
无源光子器件	光信号传输	633 nm	2016^[20]
微型LED光源	光信号发射	450 nm	2014^[8]
有源无源光子器件	发射、探测、传输、功率分配	445 nm	2022(本文)

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表 2 分路器不同端口的出射光强

	电流(mA)
	3	4	5	6	7	8	9	10
1号端口光强(a.u.)	1854.1	4065.9	4580.9	6455.0	9363.0	12213.1	13929.8	14582.0
2号端口光强(a.u.)	330.1	922.0	797.9	1102.0	1964.0	2873.0	3021.0	3383.0
3号端口光强(a.u.)	147.1	481.0	215.1	795.9	1944.0	1684.0	2025.0	1776.0

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