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局部有源忆阻器电路及其在HR耦合神经元网络中的应用

孙亮 罗佳 乔印虎

孙亮, 罗佳, 乔印虎. 局部有源忆阻器电路及其在HR耦合神经元网络中的应用[J]. 电子与信息学报, 2021, 43(11): 3374-3383. doi: 10.11999/JEIT210026
引用本文: 孙亮, 罗佳, 乔印虎. 局部有源忆阻器电路及其在HR耦合神经元网络中的应用[J]. 电子与信息学报, 2021, 43(11): 3374-3383. doi: 10.11999/JEIT210026
Liang SUN, Jia LUO, Yinhu QIAO. A Locally Active Memristor Circuit and Its Application to a Coupled Hindmarsh-Rose Neuron Network[J]. Journal of Electronics & Information Technology, 2021, 43(11): 3374-3383. doi: 10.11999/JEIT210026
Citation: Liang SUN, Jia LUO, Yinhu QIAO. A Locally Active Memristor Circuit and Its Application to a Coupled Hindmarsh-Rose Neuron Network[J]. Journal of Electronics & Information Technology, 2021, 43(11): 3374-3383. doi: 10.11999/JEIT210026

局部有源忆阻器电路及其在HR耦合神经元网络中的应用

doi: 10.11999/JEIT210026
基金项目: 安徽省自然科学研究重点项目(KJ2017A728, KJ2019A1138),安徽省教学研究一般项目(2016jyxm0714)
详细信息
    作者简介:

    孙亮:男,1983年生,副教授,研究方向为机械设计制造及其自动化

    罗佳:女,1985年生,讲师,研究方向为非线性电路设计、智能控制

    乔印虎:男,1979年生,副教授,研究方向为机械电子、机电控制

    通讯作者:

    孙亮 sun.gg010@163.com

  • 中图分类号: TN711.4; TN601

A Locally Active Memristor Circuit and Its Application to a Coupled Hindmarsh-Rose Neuron Network

Funds: The Key Projects of Natural Science Research of Anhui Province (KJ2017A728, KJ2019A1138), The General Project of Teaching Research of Anhui Province (2016jyxm0714)
  • 摘要: 该文提出一种新型局部有源忆阻器,使用标准非线性理论分析方法分析其特性,并通过直流伏安特性曲线来证明其局部有源性。此外,将局部有源忆阻器用于模拟生物突触,构建了一个局部有源忆阻突触耦合HR神经元网络。理论分析和数值仿真表明,在局部有源忆阻突触的影响下它能够产生多种放电模式和复杂的混沌行为。最后,实现了该局部有源忆阻突触耦合神经网络的模拟等效电路,并由功率模拟(PSIM)电路仿真验证了数值仿真的正确性。
  • 图  1  输入信号幅度/频率相关的伏安特性曲线图

    图  2  局部有源忆阻器的DC V-I图

    图  3  电路图

    图  4  忆阻器PSIM仿真电路图

    图  5  局部有源忆阻器电路PSIM仿真结果

    图  6  局部有源忆阻突触耦合神经元网络结构图

    图  7  关于忆阻突触耦合强度ρ1动力学状态分布

    图  8  不同忆阻突触耦合强度ρ1所对应的多种放电模式

    图  9  关于忆阻突触耦合强度ρ2动力学状态分布

    图  10  不同忆阻突触耦合强度ρ2所对应的多种动力学行为

    图  11  局部有源忆阻突触耦合HR神经元网络电路

    图  12  忆阻耦合神经元网络PSIM仿真电路

    图  13  局部有源忆阻突触耦合HR神经元网络电路仿真结果

    图  14  局部有源忆阻突触耦合HR神经元网络电路仿真结果

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出版历程
  • 收稿日期:  2021-01-08
  • 修回日期:  2021-03-24
  • 网络出版日期:  2021-04-21
  • 刊出日期:  2021-11-23

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