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基于忆阻器的感存算一体技术综述

张章 李超 韩婷婷 许傲 程心 刘钢 解光军

张章, 李超, 韩婷婷, 许傲, 程心, 刘钢, 解光军. 基于忆阻器的感存算一体技术综述[J]. 电子与信息学报, 2021, 43(6): 1498-1509. doi: 10.11999/JEIT201102
引用本文: 张章, 李超, 韩婷婷, 许傲, 程心, 刘钢, 解光军. 基于忆阻器的感存算一体技术综述[J]. 电子与信息学报, 2021, 43(6): 1498-1509. doi: 10.11999/JEIT201102
Zhang ZHANG, Chao LI, Tingting HAN, Ao XU, Xin CHENG, Gang LIU, Guangjun XIE. Review of the Fused Technology of Sensing, Storage and Computing Based on Memristor[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1498-1509. doi: 10.11999/JEIT201102
Citation: Zhang ZHANG, Chao LI, Tingting HAN, Ao XU, Xin CHENG, Gang LIU, Guangjun XIE. Review of the Fused Technology of Sensing, Storage and Computing Based on Memristor[J]. Journal of Electronics & Information Technology, 2021, 43(6): 1498-1509. doi: 10.11999/JEIT201102

基于忆阻器的感存算一体技术综述

doi: 10.11999/JEIT201102
基金项目: 国家自然科学基金(U19A2053, 61674049),中央高校基本科研业务费(JZ2020YYPY0089),中国科学院红外成像材料与器件重点实室开放课题(IMDKFJJ-19-04)
详细信息
    作者简介:

    张章:男,1982年生,教授,研究方向为集成电路设计及基于混合器件的AI神经形态芯片设计

    李超:男,1998年生,硕士生,研究方向为基于混合器件的AI神经形态芯片设计

    韩婷婷:女,1998年生,硕士生,研究方向为基于混合器件的AI神经形态芯片设计

    许傲:男,1998年生,硕士生,研究方向为基于混合器件的AI神经形态芯片设计

    程心:女,1985年生,副教授,研究方向为集成电路设计

    刘钢:男,1982年生,教授,研究方向为基于新型半导体材料的非冯忆阻逻辑器件与神经形态器件

    解光军:男,1970年生,教授,研究方向为集成电路及新型器件电路设计

    通讯作者:

    程心 xcheng@hfut.edu.cn

  • 中图分类号: TN601

Review of the Fused Technology of Sensing, Storage and Computing Based on Memristor

Funds: The National Natural Science Foundation of China (U19A2053, 61674049), The Fundamental Research Funds for Central Universities (JZ2020YYPY0089), Key Laboratory of CAS (IMDKFJJ-19-04)
  • 摘要: 忆阻器的低功耗、高响应、纳米级、非易失性等特性,在实现非冯·诺依曼计算架构中展现出巨大潜力。基于忆阻器的高密度横梁阵列可实现数据存储及并行计算一体的逻辑电路和类脑计算电路。此外,纳米传感器与忆阻器进一步集成,采集的信号直接送往忆阻器阵列进行运算和存储,感知、存储与计算一体化的芯片技术成为新的研究热点。该文对基于忆阻器的存算一体技术、感存算一体技术的研究现状进行综述,并给出研究前景展望。
  • 图  1  基于忆阻器的逻辑单元

    图  2  基于忆阻器的类脑电路

    图  3  触觉感存算一体技术

    图  4  视觉感存算一体技术

    图  5  嗅觉感存算一体技术

    图  6  听觉感存算一体技术

    图  7  感存算片上集成

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出版历程
  • 收稿日期:  2020-12-31
  • 修回日期:  2021-03-18
  • 网络出版日期:  2021-04-02
  • 刊出日期:  2021-06-18

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