Wide-IF-bandwidth CMOS Down-conversion Mixer MMIC
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摘要: 该文介绍了一种工作于毫米波频段的宽中频(IF)下变频器。该下变频器基于无源双平衡的设计架构，片上集成了射频(RF)和本振(LO)巴伦。为了优化无源下变频器的增益、带宽和隔离度性能，电路设计中引入了栅极感性化技术。测试结果表明，该下变频器的中频带宽覆盖0.5～12 GHz。在频率为30 GHz、幅度为4 dBm的LO信号驱动下，电路的变频增益为–8.5～–5.5 dB。当固定IF为0.5 GHz、LO幅度为4 dBm时，变频增益随25～45 GHz的RF信号在–7.9～–5.9 dB范围内变化，波动幅度为2 dB。LO-IF, LO-RF, RF-IF的隔离度测试结果分别优于42, 50, 43 dB。该下变频器芯片采用TSMC 90 nm CMOS工艺设计，芯片面积为0.4 mm2。Abstract: A wide-Intermediate-Frequency (IF) down-conversion mixer operating in millimeter-wave band is proposed. The mixer is designed based on a passive double-balanced structure integrating Radio-Frequency (RF) and Local-Oscillator (LO) baluns. To optimize the performances in terms of the Conversion Gain (CG), bandwidth and isolations of the mixer, the gate-inductive technique is employed. The measured results show that the mixer features a wide IF bandwidth from 0.5 to 12 GHz. A measured CG of –8.5～–5.5 dB is achieved within such a wide IF band at a LO power (PLO) of 4 dBm and a LO frequency (fLO) of 30 GHz. The proposed mixer also achieves a CG with a ripple of 2 dB from –7.9 to –5.9 dB in a wide RF band (fRF) from 25 to 45 GHz at a PLO of 4 dBm and a fixed IF frequency (fIF) of 0.5 GHz. The measured LO-to-IF, LO-to-RF and RF-to-IF isolations are better than 42, 50 and 43 dB, respectively. The chip is fabricated in TSMC 90 nm CMOS process with an area of 0.4 mm2.
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Key words:
- CMOS integrated circuit /
- Millimetre-wave /
- Mixer /
- Wide IF
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