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基于旋磁非线性传输线的小型化强电磁脉冲源的仿真研究

朱丹妮 孟进 黄立洋 崔言程 袁玉章 王海涛

朱丹妮, 孟进, 黄立洋, 崔言程, 袁玉章, 王海涛. 基于旋磁非线性传输线的小型化强电磁脉冲源的仿真研究[J]. 电子与信息学报, 2022, 44(2): 737-744. doi: 10.11999/JEIT200912
引用本文: 朱丹妮, 孟进, 黄立洋, 崔言程, 袁玉章, 王海涛. 基于旋磁非线性传输线的小型化强电磁脉冲源的仿真研究[J]. 电子与信息学报, 2022, 44(2): 737-744. doi: 10.11999/JEIT200912
ZHU Danni, MENG Jin, HUANG Liyang, CUI Yancheng, YUAN Yuzhang, WANG Haitao. Simulation Research on a Compact High Power Microwave Source Based on Gyromagnetic Nonlinear Transmission Lines[J]. Journal of Electronics & Information Technology, 2022, 44(2): 737-744. doi: 10.11999/JEIT200912
Citation: ZHU Danni, MENG Jin, HUANG Liyang, CUI Yancheng, YUAN Yuzhang, WANG Haitao. Simulation Research on a Compact High Power Microwave Source Based on Gyromagnetic Nonlinear Transmission Lines[J]. Journal of Electronics & Information Technology, 2022, 44(2): 737-744. doi: 10.11999/JEIT200912

基于旋磁非线性传输线的小型化强电磁脉冲源的仿真研究

doi: 10.11999/JEIT200912
基金项目: 国家自然科学基金(51907202)
详细信息
    作者简介:

    朱丹妮:女,1989年生,博士,助理研究员,主要研究方向为高功率微波技术、强流相对论真空电子学

    孟进:男,1977年生,教授,博士生导师,主要研究方向为电磁兼容与电磁攻防

    黄立洋:男,1991年生,博士,助理研究员,主要研究方向为电磁场数值计算

    崔言程:男,1994年生,博士生,主要研究方向为高功率微波技术

    袁玉章:男,1989年生,博士,助理研究员,主要研究方向为高功率微波技术

    王海涛:男,1990年生,博士,助理研究员,主要研究方向为高功率微波技术

    通讯作者:

    孟进 mengjinemc@163.com

  • 中图分类号: O441

Simulation Research on a Compact High Power Microwave Source Based on Gyromagnetic Nonlinear Transmission Lines

Funds: The National Natural Science Foundation of China (51907202)
  • 摘要: 与传统基于电真空器件的窄谱高功率微波源相比,基于旋磁非线性传输线(GNLTL)的宽谱强电磁脉冲源无须驱动电子束、导引磁场和真空条件,具有能量效率高、工作频率可调以及可重频运行等优势,是一种结构简单、适合小型化和固态化的技术方案。该文通过理论分析其产生射频振荡和脉冲陡化的工作机制,并利用商业软件建立一套可视化的2-D GNLTL仿真模型进行验证。通过仿真分别研究不同注入电压和不同轴向偏置磁场下的旋磁输出脉冲的时域和频域特性。模拟结果表明:随着注入电压增大,经调制的振荡电压峰值升高,而调制深度则是先增加后减小到几乎不变,输出电压上升沿减小后趋于稳定,而中心频率则随着注入电压增大而增加;随着偏置磁场增加,输出振荡峰值电压和调制深度均是先增大后减小,输出电压上升沿先减小后增大,而中心频率先减小后增大。
  • 图  1  GNLTL的工作原理

    图  2  磁矩阻尼进动示意图

    图  3  GNLTL仿真模型的剖面图,蓝色箭头表示集总端口

    图  4  Uin=25 kV, Hz=25 kA/m时旋磁射频输出的电压波形和频谱

    图  5  Uin=25 kV, Hz=25 kA/m时铁氧体磁环内部的各方向磁化强度的时变情况

    图  6  Hz=25 kA/m时不同注入电压下输出电压时域波形

    图  7  输出振荡峰值电压和调制深度随着不同偏置磁场的变化

    图  8  输出电压上升沿随着不同注入电压的变化

    图  9  旋磁振荡中心频率随着不同注入电压的变化

    图  10  输出电压上升沿随着不同偏置磁场的变化

    图  11  输出电压上升沿随着不同偏置磁场的变化

    图  12  旋磁振荡中心频率随着不同偏置磁场的变化

    表  1  同轴GNLTL射频源的研究现状

    研究机构充电电压(kV)峰值功率(MW)工作中心频率(GHz)
    俄罗斯大电流所[6]250260.001.20
    俄罗斯大电流所[8]130110.001.95
    英国MBDA Ltd[12]8089.300.77
    美国得克萨斯大学(NiZn)[1]408.404.10
    美国得克萨斯大学(YIG)[20]402.033.01
    下载: 导出CSV

    表  2  不同电压下对应的角向磁场强度

    编号
    12345
    Uin(kV)6.8013.0023.5031.0038.00
    Hϕ(kA/m)9.6918.5233.4844.1754.14
    下载: 导出CSV
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出版历程
  • 收稿日期:  2020-10-26
  • 修回日期:  2021-07-10
  • 录用日期:  2021-07-10
  • 网络出版日期:  2021-12-06
  • 刊出日期:  2022-02-25

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