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利用含纯增长模式线的异常非相干散射谱反演扰动电子温度

李海英 孔鹏飞 徐彬 吴振森

李海英, 孔鹏飞, 徐彬, 吴振森. 利用含纯增长模式线的异常非相干散射谱反演扰动电子温度[J]. 电子与信息学报, 2018, 40(6): 1499-1504. doi: 10.11999/JEIT170823
引用本文: 李海英, 孔鹏飞, 徐彬, 吴振森. 利用含纯增长模式线的异常非相干散射谱反演扰动电子温度[J]. 电子与信息学报, 2018, 40(6): 1499-1504. doi: 10.11999/JEIT170823
LI Haiying, KONG Pengfei, XU Bin, WU Zhensen. Inversion of Disturbed Electron Temperature by Anomalous Incoherent Scatter Spectra with Pure-growth Mode Line[J]. Journal of Electronics & Information Technology, 2018, 40(6): 1499-1504. doi: 10.11999/JEIT170823
Citation: LI Haiying, KONG Pengfei, XU Bin, WU Zhensen. Inversion of Disturbed Electron Temperature by Anomalous Incoherent Scatter Spectra with Pure-growth Mode Line[J]. Journal of Electronics & Information Technology, 2018, 40(6): 1499-1504. doi: 10.11999/JEIT170823

利用含纯增长模式线的异常非相干散射谱反演扰动电子温度

doi: 10.11999/JEIT170823
基金项目: 

国家自然科学基金(61475123, 61571355),陕西省自然科学基础研究计划(2016JQ4015)

Inversion of Disturbed Electron Temperature by Anomalous Incoherent Scatter Spectra with Pure-growth Mode Line

Funds: 

The National Natural Science Foundation of China (61475123, 61571355), The Program for Natural Science Basic Research of Shaanxi Province (2016JQ4015)

  • 摘要: 基于平衡态非相干散射理论的GUISDAP程序包在拟合含有纯增长模式线的非相干散射功率谱及反演加热扰动电离层参量中存在严重误差,该文提出一种以未加热时刻的电离层参量为先验信息,利用最小二乘法搜寻最佳高斯峰描述纯增长模式线来修正实测非相干散射谱,并使用电子超高斯分布的非相干散射理论拟合修正后非相干散射谱来反演获取加热扰动电子温度的方法。通过将该方法用于分析2010年秋季我国在挪威开展的电离层加热实验数据表明:利用该方法对含纯增长模式线的实测谱修正拟合后获得的电子温度比未加热时刻提高约800 K左右,增幅比例约13%~50%,该结果与现有文献报道的电离层加热引起的电子温度增幅范围吻合较好。结论表明该方法适用于基于含纯增长模式线的非相干散射谱反演扰动电离层参量。
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出版历程
  • 收稿日期:  2017-08-23
  • 修回日期:  2018-03-20
  • 刊出日期:  2018-06-19

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