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基于缩短极化码的MLC NAND Flash差错控制技术研究

郭锐 王美洁 王杰

郭锐, 王美洁, 王杰. 基于缩短极化码的MLC NAND Flash差错控制技术研究[J]. 电子与信息学报, 2017, 39(7): 1658-1665. doi: 10.11999/JEIT160864
引用本文: 郭锐, 王美洁, 王杰. 基于缩短极化码的MLC NAND Flash差错控制技术研究[J]. 电子与信息学报, 2017, 39(7): 1658-1665. doi: 10.11999/JEIT160864
GUO Rui, WANG Meijie, WANG Jie. Research on the MLC Nand Flash Error Control Technology Based on Polar Codes[J]. Journal of Electronics & Information Technology, 2017, 39(7): 1658-1665. doi: 10.11999/JEIT160864
Citation: GUO Rui, WANG Meijie, WANG Jie. Research on the MLC Nand Flash Error Control Technology Based on Polar Codes[J]. Journal of Electronics & Information Technology, 2017, 39(7): 1658-1665. doi: 10.11999/JEIT160864

基于缩短极化码的MLC NAND Flash差错控制技术研究

doi: 10.11999/JEIT160864
基金项目: 

浙江省自然科学基金(LY16F010013),浙江省重点科技创新团队基金(2013TD03),国家自然科学基金(61401130)

Research on the MLC Nand Flash Error Control Technology Based on Polar Codes

Funds: 

The Natural Science Foundation of Zhejiang Province (LY16F010013), The Key Science and Technology Innovation Team Foundation of Zhejiang Province (2013TD03), The National Natural Science Foundation of China (61401130)

  • 摘要: 为了提高MLC NAND Flash的抗误码性能,该文提出一种基于优化缩短极化码的MLC NAND Flash差错控制方法。优化缩短极化码通过优化删减图样得到,首先通过比特翻转重排序的方式得到基本删减图样,进而选择具有更低信道容量的冻结比特组成优化删减图样,使得到的删减比特全为冻结比特,可以显著提高删减算法的纠错性能。同时,根据MLC单元错误的不对称性,采用码率自适应的码字对FLASH中MSB和LSB进行不等错误保护。仿真结果表明:当误帧率为10-3时,优化缩短极化码较相同码长的LDPC码和基本缩短极化码分别约有 3.72 ~5.89 dB和1.47~3.49 dB增益;相比基于同一码率的优化缩短极化码方案,不等错误保护的差错控制方案获得约0.25 dB增益。
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出版历程
  • 收稿日期:  2016-08-22
  • 修回日期:  2017-01-12
  • 刊出日期:  2017-07-19

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