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谐振式微型电场传感器芯片级真空封装及测试

谐振式微型电场传感器芯片级真空封装及测试[J]. 电子与信息学报, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
引用本文: 谐振式微型电场传感器芯片级真空封装及测试[J]. 电子与信息学报, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor[J]. Journal of Electronics & Information Technology, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105
Citation: Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor[J]. Journal of Electronics & Information Technology, 2015, 37(9): 2282-2286. doi: 10.11999/JEIT150105

谐振式微型电场传感器芯片级真空封装及测试

doi: 10.11999/JEIT150105
基金项目: 

国家自然科学基金(61101049, 61327810)

Chip-level Vacuum Package and Test of Resonant MEMS Electric Field Sensor

  • 摘要: 为了降低传感器的驱动电压,提高该器件的品质因数和信噪比,该文研究封装材料和工艺对真空封装性能的影响,针对一种微机电系统(MEMS)谐振式微型电场敏感结构芯片,采用独特的共晶键合技术,实现该传感器的芯片级真空封装。实验结果表明,该传感器封装后的品质因数达到了30727.4,是常压封装的500倍;该封装器件具有更低的驱动电压,只需要直流分量100 mV和交流分量60 mVp-p,与常压测试时相比,分别只有原来的1/200和1/16。
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    Yang Peng-fei, Peng Chun-rong, Zhang Hai-yan, et al.. Design and testing of a SOI Electric-field Microsensor[J]. Journal of Electronics Information Technology, 2011, 33(11): 2771-2774.
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出版历程
  • 收稿日期:  2015-01-20
  • 修回日期:  2015-04-14
  • 刊出日期:  2015-09-19

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