Pt-GaAs肖特基势垒雪崩光电探测器的研究
STUDY ON Pt-GaAs SCHOTTKY BARRIER APD
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摘要: Pt-GaAs肖特基势垒雪崩光电探测器已研制成功。器件制作在施主浓度为0.5～31015cm-3、厚度约为20m的GaAs外延层上。为防止边缘击穿,用能量为500keV、剂量为11015cm-2的质子轰击,在直径为150m的光敏区外形成高阻保护区。半透明的Pt肖特基势垒膜用特殊的蒸发法形成。器件的峰值响应波长随偏压的改变可以从8600()移动到8835(),截止波长可延伸到9700(),观察到明显的Franz-Keldysh效应。器件倍增可达100以上;暗电流仅几纳安;过剩噪声系数为7;上升、下降时间短于1ns。这种器件可与FET实现平面集成。
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关键词:
- 雪崩光电探测器; GaAs; 肖特基势垒
Abstract: Pt-GaAs Schottky barrier APDs have been investigated. The devices were fabricated on GaAs epitaxial layer with carrier concentration of 0.5-31015cm-3 and thickness of about 20 m. Guard ring along with sensitive area was formed by H+ bombardment with energy of 500 keV and dosage of 11015cm-2 to prevent edge breakdown. Semi-transparem Pt film was evaporated using a special evaporation source. The peak response wavelength of the device is 8600 -8835 at different bias voltages. Optical absopdon edge could extended to 9700 . Franz-Keldysh effect has been observed. The multiplication of above 100 could reach. Dark current is about several nA. Excess noise coefficient is 7 and both rise and fall time were less than 1 ns. The device could be integrated monolithically and planarly with GaAs FET. -
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