非晶硅少子扩散长度的测量
MEASUREMENT OF DIFFUSION LENGTH OF HOLES IN a-Si:H
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摘要: 正 (一)引言 非晶硅少子扩散长度对非晶硅太阳电池的性能有重要影响,它是表征非晶硅材料质量的重要参数。最近Dresner和Moore分别用表面光电压法(SPV法)测量非晶硅少于扩散长度获得成功。但前者需要超高真空系统,样品表面要经过溅射和退火,后者使用非晶硅液体肖特基势垒,装置较烦。我们试用顶层淀积了金属镍的非晶硅薄膜作样品,利用镍和非晶硅膜构成的金属肖特基势垒进行表面光电压测量,获得成功。这样
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Abstract: The results of a study in the diffusion length of holes in a-Si:H by measuring the sur-face photovoltage of the metal (Ni) Schottky barrier is reported. The change of field-assis-ted hole transport with bias light was observed. It is believed that measurement of diffusion length by this method may become a useful way of detecting and improving the quality of a-Si:H. -
J. Dresner, D. J. Szostak and B. Goldstein, Appl. Phys. Lett., 38(1981), 998.[3]A. R. Moore, Appl. Phys. Lett., 40(1982), 403.[7]R. O. Bell, Appl. Phys. Lett., 36(1980), 936. -
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