非晶硅光电导响应的动力学研究(Ⅰ)强电场下的光电导响应
THE DYNAMICS IN PHOTOCONDUCTION RESPONSE OF AMORPHOUS SILICON (Ⅰ) The Photoconduction Response under Strong Electric Field
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摘要: 本文从动力学的观点出发,研究了各种条件下的光电导响应,以及有关的效应。本篇只讨论强电场下的光电导响应。 我们测量了不同照度和电场下的瞬态响应,发现强光区,在一定强电场下,时间常数0随照度F的-0.5次方变化(0=F-0.5)。弱光区时间常数不变,在一定照度下,上升时间随电场指数变化;下降时间不变。由于晶体中的一些概念已不适用于非晶硅的情况,我们从Mott-CFO模型出发,用速率方程推导出弱光和强光照射下的光电导响应公式,较好地解释了实验结果。
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Abstract: In this paper, the photoconduction response and related effects under different conditions are investigated from the view point of dynamics. The photoconduction response under strong electric field is discussed.The photoconduction response under different illumination and different field intensity have been measured. In strong light region with certain strong field, the time constant 0 versus illumination F is given by the relation 0=aF-0.5; however, 0 is a constant in weak light region. The rise time varies exponentially with the field intensity, but the decay time is a constant. Because normal ideas about crystals could not fir the condition of a-Si, we derived an equation of photoconduction response with illumination in both weak and strong light regions, according to the Mott-CFO model and by the rate equations. It can explain the expermental results well. -
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