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II-VI族半导体特性参数的三维边缘元分析

徐善驾 盛新庆 贾冬焱

徐善驾, 盛新庆, 贾冬焱. II-VI族半导体特性参数的三维边缘元分析[J]. 电子与信息学报, 1999, 21(1): 110-114.
引用本文: 徐善驾, 盛新庆, 贾冬焱. II-VI族半导体特性参数的三维边缘元分析[J]. 电子与信息学报, 1999, 21(1): 110-114.
Xu Shanjia, Sheng Xinqing, Jia Dongyan. 3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS[J]. Journal of Electronics & Information Technology, 1999, 21(1): 110-114.
Citation: Xu Shanjia, Sheng Xinqing, Jia Dongyan. 3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS[J]. Journal of Electronics & Information Technology, 1999, 21(1): 110-114.

II-VI族半导体特性参数的三维边缘元分析

3-D EDGE-ELEMENT ANALYSIS FOR THE CHARACTERISTIC PARAMETERS OF II-VI SEMICONDUCTOR MATERIALS

  • 摘要: 本文用三维边缘元方法分析了电导率为张量的有间隙Ⅱ-Ⅵ族半导体材料的散射特性;给出了散射参数与半导体特性参数之间的关系曲线并说明了用这些曲线确定Ⅱ-Ⅵ族半导体电特性参数的方法。该方法直接从泛函变分出发,避开了其它方法中求解有损超薄各向异性介质填充波导本征值问题的困难,简化了求解过程。计算结果与实验值的比较证实了本方法具有有效、可靠和精确的特点。
  • Greiner P, Poligone L, Becker C R, Geick R. Contactless measurement of the conductivity of II-VI epitaxial layers by means of the partially filled waveguide method, Appl. Phys., 1992, A55: 279-288.[2]Shanjia Xu, Xinzhang Wu, Greiner P, Becker C R, Geick R, Microwave transmission and reflection of stratified lossy dielectric segment partial filled waveguide, International Journal of Infrared and[3]Millimeter Waves, 1992, 13(4): 569-587.[3] Shanjia Xu, Xingqing Sheng, Greiner P, Becker C R, Geick R, High-order finite-element analysis for scattering charcateristics of II-VI semiconductor materials, Chinese Journal of Infrared and Millimeter Waves, 1992, 12(6): 177-184.[4]Shanjia Xu, Xingzhang Wu, Boege P, Schafer H, Becker C R, Geick R, Scattering characteristics of 3-D discontinuity consisting of semi-conductor sample filled in waveguide, International Journal of Infrared and Millimeter Waves, 1993, 14(10): 2155-2190.[5]Chen C H, Lien C D. The variational principle for non-self-adjoint electromagnetic problems, IEEE Trans. on Microwave Theory and Tech., 1993, MTT-28(8): 878-886.
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出版历程
  • 收稿日期:  1997-07-11
  • 修回日期:  1998-02-12
  • 刊出日期:  1999-01-19

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