象增强硅靶摄象管移象区设计
DESIGN OF THE SHIFTING SECTION OF AN INTENSIFIER SILICON TARGET PICK-UP TUBE
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摘要: 正 (一)引言 随着微光和夜视技术的飞速发展,本世纪七十年代出现了高灵敏度的象增强硅靶摄象管(SIT),并立刻引起科研、军事和商业方面的注意。首先研制出的是1英寸(即光电阴极有效直径为25mm)管。在日本命名硅靶电子倍增摄象管(SEM)。在美国,则称为电子轰击硅管(EBS)或象增强硅视象管(ISV)。该管的高灵敏度与其移象区设计的优劣
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关键词:
Abstract: In this paper, the principle of design of the shifting image section of an intensifier silicon target pick-up tube is given. An electrostatic electron-optical system with a photoca-thode having an effective diameter of 40 mm and a system magnification of 0.65 has been designed. The experiments show that when the electron image of the photocathode is tran-sfered to the silicon target, the geometrie distortion is only 2%, the field curvature is 2 mm. The astigmatism is less than 0.32 mm at 80 percent of the viewing field and the resolution is over 50 1p/mm. It shows that the design of the electron-optical system is good and reasonable. -
甘治华、朱昌昌,40 /25mmSIT管研制进展,四机部1431所内部资料,1981年.[4]204研究所、北京工业学院、211研究所,变象管及象增强器电子光学系统的数值计算与设计(内部报告),1975年.[5]周立伟,夜视器件的电子光学(第一册),北京工业学院,1977年. -
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