雪崩二极管的计算机模拟
IMPATT DIODE SIMULATION
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摘要: 本文讨论了雪崩二极管计算机模拟的物理模型、计算方法和程序设计等问题。特别详细地介绍了半隐式方法,建立了一系列程序来计算雪崩二极管的直流小信号和大信号解。这一套程序原则上对于各种材料、各种形式掺杂分布的所有渡越时间型器件都是适用的,但文章中只给出了对硅雪崩二极管的计算结果。
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Abstract: A set of programs is estabilished for IMPATT Diode Simulation. It can be used to calculate the DC small signal and large signal solution of the IMPATT diodes made of different materials and having different doping profiles. The physical principles, numerical methods and program designs are discussed, and the half-implicit method is presented in detail. Those programs can be used to simulate all kinds of transit-time devices, but only the calculating results of Si IMPATT Diode are given. -
W. J. Evans and G. I. Haddad IEEE Trans. on ED, ED-15(1968),708.[2]C. W. Lee, R. J. Lomax and G. I. Haddad IEEE Trans. on MTT,MTT-22(1974), 160.[4]沈阳计算技术研究所,电子计算机常用算法,科学出版社,1976年.[5]宋文淼等,雪崩器件的计算机模拟,中国科学院电子学研究所(内部报告),1982年. -
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