|
R. N. Hall and J. H. Racette, J. Appl. Phys., 35(1964), 379.[2]J. W. Chen and A. G. Milnes, Ann. Rev. Mater. Sci., 10(1980), 157.[3]A. M. Salma, J. Electrochem. Soc., 126(1979), 114.[4]C. S. Fuller and J. C. Severins, Phys. Rev., 96(1954), 21.[5]C. J. Gallagher, J. Phys. Chem. Solids, 3(1957), 82.[6]C. B. Collins and R. O. Carlson, Phys. Rev., 108(1957), 1409.[7]T. Nakano and Y. Inuishi, J. Phys. Soc. Jpn, 19(1964), 851.[8]A. G. Milnes, Deep Impurities in Semiconductors, p. 14, Wiley, New York, (1973).[9]A. A. Lebedev and M. M. Akhmedova, Sov. Phys. Semicond., 10(1976), 1130.[10]M. M. Akhmedova, L. S. Berman, L. S. Kostina and A. A. Lebedev, ibid., 10(1976), 140.[11]N. Toyama, Solid State Electron., 26(1983), 37.[12]L. C. Kimerling, J. L. Benton and J. J. Rubin, Defects and Radiation Effects in Semiconductors, 59(1980),217.[13]陈开茅,秦国刚,半导体学报,7(1986)., 298.[14]秦国刚等,半导体学报,2(1981)5, 169.[15]E. R. Weber, Appl. Phys. A, 30(1983), 1.[16]G. W. Ludwig and H. H. Woodburg, Solid State Phys., 13(1962),223.[17]W. C. Dash, Phys. Rev., 98(1955), 1536.[18]Y. Chikaura and K. Kishimoto, Jpn. J. Appl. Phys., 19(1980), L5.
|
下载:
