6H－SiC MOS结构电特性及其辐照效应的研究
Study of the electric characteristics and radiation response of 6h-sic mos structure
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摘要: 对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。结果说明:在氧化层电场较高时Fowler-Nordheim隧穿电流决定着SiC MOS结构的漏电流,当幅照栅偏压为高的正电压时,电离幅照对SiC MOS电容的影响会更明显,SiC MOS器件比Si器件具有好的抗辐照的能力,在58kGy(Si)的辐照剂量下,其平带电压漂移不超过2V。Abstract: The radiation response and electric characteristics of 6H-SiC MOS structure are studied with experiment. It is found that the main electronic conduction mechanism in the high field regions of the I-V characteristics is identified to be Fowler-Nordheim tunneling. The fact that ionization radiation effect becomes more notable at high oxide electric field indicates that the generation of radiation induced charge-centers near SiC/SiO2 interface and in gate oxide under high electric field is higher than that under low electric field. SiC MOS structure has a more significant tolerance to y rays than Si MOS structure. Flatband voltage shift of SiC MOS capacitor is less than 2V under radiation of 58kGy(Si).
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