Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli. ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(5): 537-543.
Citation:
Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli. ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(5): 537-543.
Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli. ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(5): 537-543.
Citation:
Li Yao, Zheng Jiang, Shen Keqiang, Wei Tongli. ANALYSIS OF TRANSIENT CHARACTERISTICS OF ECL CIRCUIT AT LOW TEMPERATURE[J]. Journal of Electronics & Information Technology, 1996, 18(5): 537-543.
Detailed analysis of transient characteristics of ECL circuits is performed in this paper, then a relatively exact propagation delay expression applied to all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.
Cressler J D, Tang D D, Jenkins K A, et al. IEEE Trans. on ED, 1989, 36(8): 1489-1502.[2]Cressler J D, Tang D D, Jenkins K A, et al. Low-Temperature Operation of Silicon Bipolar ECL Circuits. ISSCC Tech. Dig., New Fork: 1989, 228-229.[3]Stork J M C. Bipolar Transistor Scaling for Minimum Switching Delay and Energy Dissipation. IEDM Tech Dig., San Francisco: 1988, 550-553.[4]李垚, 沈克强,魏同立.固体电子学研究与进展,1995, 15(1):26-32.[5]李垚, 魏同立, 沈克强.东南大学学报, 1995, 20(3): 39-38.[6]Satake H,Hamasaki T. IEEE Trans. on ED, 1990, ED-37(7): 1688-1697.
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