Design Method of Ferroelectric Field Effect Transistor Polymorphic Gate Based on Immune Algorithm

ZHANG Lining; HU Weichen; WANG Xin’an; CUI Xiaole

doi:10.11999/JEIT230287

Volume 45 Issue 9

Sep. 2023

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ZHANG Lining, HU Weichen, WANG Xin’an, CUI Xiaole. Design Method of Ferroelectric Field Effect Transistor Polymorphic Gate Based on Immune Algorithm[J]. Journal of Electronics & Information Technology, 2023, 45(9): 3157-3165. doi: 10.11999/JEIT230287

Citation:

ZHANG Lining, HU Weichen, WANG Xin’an, CUI Xiaole. Design Method of Ferroelectric Field Effect Transistor Polymorphic Gate Based on Immune Algorithm[J]. Journal of Electronics & Information Technology, 2023, 45(9): 3157-3165. doi: 10.11999/JEIT230287

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Design Method of Ferroelectric Field Effect Transistor Polymorphic Gate Based on Immune Algorithm

doi: 10.11999/JEIT230287

1.
Key Laboratory of Integrated Micro-systems, Peking University Shenzhen Graduate School, Shenzhen 518055, China
2.
Peng Cheng Laboratory, Shenzhen 518055, China

Funds: Shenzhen Discipline Layout Project (JCYJ20220818100814033), Shenzhen Peacock Team Project (KQTD20200820113105004), The Key Technology R&D Plan of Guangdong Province (2019B010155002)

Received Date: 2023-04-18
Rev Recd Date: 2023-08-24

Available Online: 2023-08-28

Publish Date: 2023-09-27

Abstract

Abstract

The research on polymorphic circuits applied to the field of hardware security for new devices other than Metal Oxide Semiconductor Field-Effect Transistors (MOSFET) is relatively limited, often with only a few design examples, lacking general research methods and polymorphic gate design platforms. A polymorphic gate design method based on Ferroelectric Field Effect Transistor (FeFET) devices is proposed. Immune algorithms are used to attribute the generation problem of polymorphic gate circuits based on FeFET to the process of biological intergenerational evolution. A complete FeFET polymorphic gate design algorithm is implemented by combining the C++language platform with the Hspice simulation tool. Combining specific process and circuit models, a design platform for three types of polymorphic gates controlled by temperature, power supply voltage, and external signals is constructed. The results indicate that this design method can effectively generate FeFET based polymorphic circuits, and the generated polymorphic gate circuits can achieve multiple control methods for temperature, power supply voltage, and external signals.
- Polymorphic gates,
- Ferroelectric Field-Effect Transistors (FeFET),
- Immune algorithms,
- Hardware security

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References(17)

References

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