Le Jiayong, Jiang Jianfei, Cai Qiyu. Numerical simulator of capacitance matrix for nano-electronic system[J]. Journal of Electronics & Information Technology, 2002, 24(11): 1494-1498.
Citation:
Le Jiayong, Jiang Jianfei, Cai Qiyu. Numerical simulator of capacitance matrix for nano-electronic system[J]. Journal of Electronics & Information Technology, 2002, 24(11): 1494-1498.
Le Jiayong, Jiang Jianfei, Cai Qiyu. Numerical simulator of capacitance matrix for nano-electronic system[J]. Journal of Electronics & Information Technology, 2002, 24(11): 1494-1498.
Citation:
Le Jiayong, Jiang Jianfei, Cai Qiyu. Numerical simulator of capacitance matrix for nano-electronic system[J]. Journal of Electronics & Information Technology, 2002, 24(11): 1494-1498.
The principle and application of numerical simulator of capacitance matrix for nano-electronic system called SJTU-NANO-FCACI is studied.-The algorithm of the program is analyzed. With the program, the capacitances of spherical capacitor, which are often used in nano-electronics, are calculated and compared with the approximate formula. The results demonstrate that the program has a high calculation precision, a fast calculation speed and can be used in many applications.
K. Nabors, J. White, FastCap: A multipole accelerated 3-D capacitance extraction program,IEEE Trans. on Computer-Aided Design, 1991, 10(11), 1447-1459.[2]程子川,蒋建飞,蔡琪玉,电子空穴对单电子陷阱存储器的设计和分析,电子学报,2000,28(11),134-136.