THE RESEARCH OF ELECTRON TRANSFER IN MIM LIGHT EMISSION TUNNEL DIODE

Lambe J，McCarthy S L．Light emission from inclastic electron tunneling Phys．Rev Lett.,1976：37(14)：923-926．[2]Troyan P E, Lubsanov R B, Vorobyev G A，et al Flat dusplay based on the metal-insulator-metal emitter array．J．Vac．Sci．Technol．B．1993, 11(2)：514-517[3]Raymond S，Van Hoof C，Geone J，et al Resonant tunneling light-emitting diode as an optical switch Electron. Lett.,1993，29(14)：1301-1302．[4]Akazawa M，Ameimiya Y.Directional single-electron-tunneling junction Jpn[J].J Appl Phys.1996,35(Part l，No．6 A):3569-3575[5]Ito K, Ohygrma S, Uehara Y, et al STM light emission spectroscopy of surface micro-structures on granular Au films. Surface Science，1995, 324(2／3)：282-288．[6]Hoofring A B，Kapoor V J，Krawczonek W．Submicron nickel-oxide-gold tunnel diode detectors for rectennas. J．Appl．Phys.,1989，66(1): 430-437．[7]Mills D L, Weber M，Laks B．Light Emission from Tunnel Junctions．In Tunneling Spectroscopy.edited by Hansma P K，New York：Plcnum，1982，121-15l[8]Szentirmay Z．Surface plasmon assisted clection-photon interaction in metal-oxide-metal layered structures Prog．Quant．Electr，1991．15(3)：175-230[9]张佑文，孙承休，高中林，孙日俊．金属／绝缘体／金属隧道结的粗糙度与发光光谱的关系．电子学报。1997, 25(5)：25-28。[10]Schiff L I Quantum Mechanics，3rd cd.,New York：McGraw-Hill Book Company；1968：chap.8.[11]Kittle C Introduction to Solid State Physics，6th edition，New York：John Wiley Sons：Inc.,1986：134．[12]Sze S M．Physics of semiconductor Devices, 2nd edition，New York：John Wiley Sons；1981，396[13]马文淦，林趾荣，张桂根，等．金属势垒参数与上电极的相关性，物理学报，1991：40(3)：483-488.