ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE

Li Siyuan; Zhang Tongjun; Li Shousong; Wang Yuzhen

Volume 7 Issue 3

May 1985

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Article Navigation > Journal of Electronics & Information Technology > 1985 > 7(3): 238-240

Li Siyuan, Zhang Tongjun, Li Shousong, Wang Yuzhen. ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE[J]. Journal of Electronics & Information Technology, 1985, 7(3): 238-240.

Citation:

Li Siyuan, Zhang Tongjun, Li Shousong, Wang Yuzhen. ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE[J]. Journal of Electronics & Information Technology, 1985, 7(3): 238-240.

Li Siyuan, Zhang Tongjun, Li Shousong, Wang Yuzhen. ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE[J]. Journal of Electronics & Information Technology, 1985, 7(3): 238-240.

Citation:

Li Siyuan, Zhang Tongjun, Li Shousong, Wang Yuzhen. ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE[J]. Journal of Electronics & Information Technology, 1985, 7(3): 238-240.

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ELECTRIC EFFECTS OF La AT THE Si/SiO2 INTERFACE

Received Date: 1984-03-19
Rev Recd Date: 1900-01-01
Publish Date: 1985-05-19

Abstract

Abstract

The negative electric effects of La metai at the Si/SiO2 interface and the heat treatment behaviour of these effects are studied experimentally. In addition, the results of electron spectroscopy analysis of the La-doped interface are also presented.

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References(1)

References

李思渊,李寿嵩等,半导体技术,1981年,第2期,第1页.[2]李思渊,张同军,李寿嵩,兰州大学学报,18(1982), 125.[3]李思渊,张同军,李寿嵩,半导体学报,4(1983), 606.[4]李思渊,张同军,李寿嵩,王毓珍,兰州大学学报,19(1983), 125.[5]S. D. Brotherton,J.Appl. Phys., 42(1971), 2085.[6]R. Holm and S. Store, Appl. Phys., 12(1977), 101.[7]K. S. Kim et al., Surface Science, 43(1974), 625.[8]Y. C. Cheng, Progress in Surface, 18 (1977), 181.[9]李思渊,张同军,李寿嵩,王毓珍,兰州大学学报,19(1983), 156.[10]E. Kooi, Philips. Res. Repts., 21 (1966), 477.

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