Advanced Search
Volume 19 Issue 5
Sep.  1997
Turn off MathJax
Article Contents
Zhuang Xuezeng, Xia Shanhong, Liu Guangyi. A DISCUSSION ON SOME VACUUM MICROELECTRONIC DEVICES[J]. Journal of Electronics & Information Technology, 1997, 19(5): 688-694.
Citation: Zhuang Xuezeng, Xia Shanhong, Liu Guangyi. A DISCUSSION ON SOME VACUUM MICROELECTRONIC DEVICES[J]. Journal of Electronics & Information Technology, 1997, 19(5): 688-694.

A DISCUSSION ON SOME VACUUM MICROELECTRONIC DEVICES

  • Received Date: 1996-05-20
  • Rev Recd Date: 1996-12-30
  • Publish Date: 1997-09-19
  • A brief introduction of some major vacuum microelectronic devices is presented including field emitter arrays(FEA), feild emission displays(FED) and the vacuum microelectronic devices in microwave and millimeter-wave bands. The paper mainly discusses the requirements for FEA by the mentioned devices, possible solutions to the requirements, and further research topics. As an example, the paper also discusses research topics and problems about vacuum microelectronic microwave tubes.
  • loading
  • Buck D A, Shoulders K R. An approach to microminiature system. Proc. of the Eastern Joint Computer Conf., Amer. Inst. of Elect. Engrs. New York: 1958, 55-9.[2]Spindt C A. A thin film field emission cathode[J].J. Appl. Phys.1968, 39:3504-3505[3]Takao Utsumi. Vacuum microelectronics: whats new and exciting, Keynote address on 3rd Int1 Vacuum Electronics Conference. IEEE Trans. on ED, 1991, ED-38(10): 2276-2283.[4]Brodie I, Schwoelbel P R. Vacuum microelectronic devices[J].Proc. IEEE.1994, 82(7):1006-1034[5]Fowler R H, Nordheim L W. Electron emission in intense fields, Proc. R. Soc., London 1928, A119: 173.[6]Spindt C A, Holland C E, Rosengreen A, Brodie I. Field emitter arrays for vacuum microelectronics. IEEE Trans. on ED, 1991, ED-38(10): 2355.[7]Thomas R N, Wickstrom R A, Schroder D K, Nathanson H C. Fabrication and some application of large area silicon field emission arrays.[J]. Solid-State Electronics.1974,17:155-[8]Brodie I, Spindt C A. Vacuum microelectronics. Adv. Electron. Electron Physics, 1992, 82: 1-78.[9]Busta H H. Review vacuum microelctronics-1992, Journal of Micromech. Microeng,1992, (2): 43-74.[10]Rakhshandehroo M R, Pang S W. Fabrication of Si field emitters by dry etching and mask erosion. Journal of Vac. Sci. and Technol., 1996, B 14(2): 612-616.[11]Cumin C. The field emission display: A new flat panel technology, Invited Paper, Int1 Display Research Conference, San Diego, CA: 1990, 12-5.[12]Lee K J, Hill D N, Cockran J K, Chapman A T. Current limiting of field emission array cathodes, 1st Int1 Conf. on Vacuum Microelectronics, Williamsburg, Virginia, USA: 1988.[13]Vaudine P, Meyer R. `Microtips fluorescent display, Proc. IEDM 1991, 197-200.[14]Yasushi Toma, Seigo Kanemaro, Junji Itoh. Electron-beam characteristics of double-gated Si field[15]emission arrays. Journal of Vacuum Sci. and Technol., 1996, B 14(3): 1902-1905.[16]Spallas J P, Hawryluk A M, Kania D R, Field emitter array mask patterning using laser interference lithography. J. of Vacuum Sci. and Technol., 1995, B 13(5): 1973-1978.[17]Djubua B C, Chubun N N, Emission properties of Spindt-type cold cathodes with different emission[18]cone material. IEEE Trans. on ED, 1991, ED-38(10): 2314-2316.[19]Macaulay J M, Brodie I, Spindt C A, Hollan C E. Cesiated thin-film field-emission microcathode arrays. Appl. Phys. Lett. 1992, 61(8): 997-999.[20]Tianbao Xue, Mackie W A, Dvis P R. Field emission from ZrC film on Si and Mo single emitters and emitter arrays, Journal of Vacuum Sci. and Technol., 1996, B 14(3): 2090-2092.[21]Fursey G. The forming of submicrogeometry on the solid and liquid surface in the strong electric fields, 3rd Int1 Conf. on Vacuum Microelectronics, Monterey CA, USA: 1990.[22]Hunt C E, Trujillo J T, Orvis W J. Structure and electrical characteristics of Si field-emission micro-electronic devices, IEEE Trans. on ED. 1991, ED-38(10): 2309-2313.[23]McGruer N E, Johnson A C, McKnight S W, Schwab W C, Chung Chan, Shen Tong. Prospects for a 1-TH2 vacuum microelectronics microstrip amplifier. IEEE Trans. on ED. 1991, ED-38(3): 666-671.[24]Philips P M, Neidert R E, Malsawma L, Hor C. Microwave triode amplifiers from 1-2 GHz using molybdenum thin film field emission cathode devices. IEEE Trans. on ED. 1995, ED-42: 1674-1680.[25]Friz W, Ettenburg M. The SIMTRON concept, 3rd Int1 Conf. on Vacuum Microelectronics, Monterey CA, USA: 1990.[26]Liu G Y, Jin S L, Bian P, Liu J H, Zhou Q H, Xue Z. Cha Z Y. A new kind of chip structure for[27]TFFEC-Wide channel isolation on the dielectric surface. 1st Int1 Conf. on Vacuum Microelectronics, Technical Program, Williamsburg, USA: 1988,7-8.[28]柯春和,李兴辉.平板显示器进展.中国电子学会真空电子学分会第10届年会论文集(下集),北京:1995, 20-23.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Article Metrics

    Article views (2516) PDF downloads(573) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return