DEEP LEVEL IN InGaAsP/InP DH LED

Zhang Guicheng; Wu Zhen

Volume 11 Issue 5

Sep. 1989

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Zhang Guicheng, Wu Zhen. DEEP LEVEL IN InGaAsP/InP DH LED[J]. Journal of Electronics & Information Technology, 1989, 11(5): 557-560.

Citation:

Zhang Guicheng, Wu Zhen. DEEP LEVEL IN InGaAsP/InP DH LED[J]. Journal of Electronics & Information Technology, 1989, 11(5): 557-560.

Zhang Guicheng, Wu Zhen. DEEP LEVEL IN InGaAsP/InP DH LED[J]. Journal of Electronics & Information Technology, 1989, 11(5): 557-560.

Citation:

Zhang Guicheng, Wu Zhen. DEEP LEVEL IN InGaAsP/InP DH LED[J]. Journal of Electronics & Information Technology, 1989, 11(5): 557-560.

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DEEP LEVEL IN InGaAsP/InP DH LED

Received Date: 1987-07-13
Rev Recd Date: 1988-02-15
Publish Date: 1989-09-19

Abstract

Abstract

The deep level in InGaAsP/InP DH LED have been studied by DLTS method. The results show that when the p-n junction located in the interface of the p-InP/n-In GaAsP, there is deep level in some InGaAsP/InP DH LED. The activation energy △E is 0.24eV.

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References(1)

References

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