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Volume 27 Issue 2
Feb.  2005
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Li Ze-hong, Zhang Bo, Li Zhao-ji. A Threshold Voltage Model of the Short Channel DMOS[J]. Journal of Electronics & Information Technology, 2005, 27(2): 322-325.
Citation: Li Ze-hong, Zhang Bo, Li Zhao-ji. A Threshold Voltage Model of the Short Channel DMOS[J]. Journal of Electronics & Information Technology, 2005, 27(2): 322-325.

A Threshold Voltage Model of the Short Channel DMOS

  • Received Date: 2003-09-24
  • Rev Recd Date: 2004-05-28
  • Publish Date: 2005-02-19
  • A threshold voltage model of the short channel DMOS (Double-Diffusion Metal-Oxide- Semiconductor) is proposed. Based on the 2-D distribution of channel depletion charge, the channel depletion charge is calculated and the mathematical expression of the threshold voltage model of the short channel DMOS is obtained. The results of the model agree well with those of the 2-D simulator MEDICI. The analysis shows that the effect of short channel should be considered when the channel length is less than 0.80m.
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  • 李泽宏,李肇基,张波等.非均匀沟道MOS辐照正空间电荷迁移率模型.物理学报,2004,53(2):561-565.[2]李泽宏,张波,李肇基等.DMOS阈值电压二维模型.半导体学报,2004,25(6):715-719.[3]Kasley K L, Oleszek G M, Zigadlo J P. A model for the lateral junction contour of double-diffused Gaussian profiles[J].IEEE Trans. on Electron Devices.1984, 31 (7):1341-[4]Baliga B J. Power Semiconductor Devices. Boston: PWS Publishing Co., 1996:265 - 278.[5]江月明.超级灵巧电源技术进入纳米领域.中国集成电路,2003,3(6):56-59.[6]Maneesha, Subhasis Haldar, Manoj K. Khanna. Analytical theory of two-dimensional charge sheet model for short channel MOSFETs under non-linear charge control. Solid State Electronics, 1995, 38(11): 197- 185.[7]Chang-Hoon Choi, Chidambaram P R, Khamankar R, Machala C F, et al.. Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS, IEEE Trans[J].on Electron Devices.2002, 49(7):1227-[8]AVANT. Medici 4.1 Users Manual, 1994.
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