FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR

Zhao Cezhou; Liu Enke; Li Guozheng; Gao Yong; Liu Xiding

Volume 19 Issue 1

Jan. 1997

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Article Navigation > Journal of Electronics & Information Technology > 1997 > 19(1): 141-144

Zhao Cezhou, Liu Enke, Li Guozheng, Gao Yong, Liu Xiding. FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR[J]. Journal of Electronics & Information Technology, 1997, 19(1): 141-144.

Citation:

Zhao Cezhou, Liu Enke, Li Guozheng, Gao Yong, Liu Xiding. FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR[J]. Journal of Electronics & Information Technology, 1997, 19(1): 141-144.

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FINITE ELEMENT ANALYSIS OF THE SOI STRUCTURE M-Z INTERFEROMETRIC MODULATOR

Received Date: 1995-03-09
Rev Recd Date: 1996-01-04
Publish Date: 1997-01-19

Abstract

Abstract

A new method for analysing SOI (Silicon on Insulator) Sructure Mach-Zehnder interferometric modulator by using finite element method is put forward. On the basis of the theory of the single-mode SOI rib optical waveguides with large cross-section, the electro-optic modulating mechanism of the modulator is investigated by using the plasma dispersion effect, and the electrical characteristics of the device is analysed by using the finie element method at p+n junction large injected. So the method provides a basis of the theory for the device to be fabricated.

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References

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