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Volume 23 Issue 5
May  2001
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Liu Guangyi, Xia Shanhong, Zhu Minhui, Liu Wu. NEW DEVELOPMENT OF FIELD EMISSION ARRAY[J]. Journal of Electronics & Information Technology, 2001, 23(5): 497-502.
Citation: Liu Guangyi, Xia Shanhong, Zhu Minhui, Liu Wu. NEW DEVELOPMENT OF FIELD EMISSION ARRAY[J]. Journal of Electronics & Information Technology, 2001, 23(5): 497-502.

NEW DEVELOPMENT OF FIELD EMISSION ARRAY

  • Received Date: 1999-07-20
  • Rev Recd Date: 2000-01-21
  • Publish Date: 2001-05-19
  • Some hot-spots of research in the field of the field emission array (FEA) and the vacuum microelectronics (VME) have been developed abroad in the last phase of 1990s. The expand speed of the FEA subject is very fast, and the non-heated electron emission sources iriside some advanced electron-physics equipments have also got a relevant development during this period. Considering those trends in the fields of basie science-FEA and VME abroad, according to the particularity of the vacuum electron emission, to seize the centralized relatively cathodes in the research or the report, a brief summary, review or comparison has been made, a more important type of the field emission array-the plasma electron source array which has already been developed into practical use recently in the information display has also been introduced simply.
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  • 刘光诒,李建平,陈善化,等、国际真空微电子学概况,机电部电真空情报网, DB,BPQ90-915,1991,1-66.[2]Hu Hanquan,Liu Guangyi,A new milestone of an active device-vacuum microelectronics and its prelimioary research in PRC,2nd Its,Conf.on Millimeter Wave and Far-Infrared Tech,Beijing,China,Edited by Gail M.Tucker,Electron Indus.Pub.House,1992,17-21.[3]Liu Guangyi,Zhuang Xuezheng,Wu Ersheng,Hu Hangquan,Recent status in the field of mmW-VME in the early 1990s.Proc.of 3rd ICMWFST94,Guangzhou,China,edited by GIT,USA,The CIE Pub,1994,1-9.[4]Xia Shanhong.Liu Jia,Cui Dafu,Han Jinhong,et al.Investigation on a novel vacuum micro-elcetronic pressure sensor with stepped field emisson array,J.Vac,Sci.Tech,1997,B-15(4),1573-1576.[5]C.A.Spindt.K.R.Shoulders.L.N.Heynick,U.S.Patent,1974,No,3,789,471.[6]彭自安,柯春和,冯进军,李兴辉,SPlndt型阴极的研制,电子器件, 1994,17(3),76-76.[7]刘光治,九十年代初期阵列场发射阴极研究进展, IEEE北京分合专题报告会,北京,电子部12所印发1993年12月.1-29.[8]H.F.Gray.C.Moglestue,Voltage saturation in n-type silicon field emitter arrays,experiments and electron transport modelling,34th IFES,Osaka,Japan,1987,121-121.[9]Xia Shanhong Liu Jia,Vacuum microelkectronic pressure sensor with novel steppedorcuredcathode,J.Vac.Sci,Tech,1998,B-16(3):1226-1232.[10]王保平,童林夙,赵琴等.硅尖阵列场发射射微二极管的制备及特性研究,电子器件,1994,17(3):55-60.[11]W.P.Kang,J.L,.Davidson,M.Howell,B.Bhuva,D.L.Kinser,D.V.Kern.Li Qi.Xu Jinfang,Micropatterned polycrystalline diamond field emitter vacuum diode arrays,J.Vac,Sci.Tech,1996,B-14(3)M2068-2071.[12]M.S.Lim,et al,Undoped poly-Si lateral field emitter arrays with stble anode current by self current limiting,Tech,Digest of llth IVMC,Asheville NC,USA,1998,113-114.[13]E ,I.Givargizov,Ultrasharp tips for field emission applications prepared by the vapor-liquid-solid growth technique,J.Vac.Sci.Tech,1993,B-11(2),449-453.[14]Nishida Jun,Field emission from SiC whisker,J.Appl.Phys,1967,38(3),5417-5421.[15]S.J.Magnus,et al,Characterization of emission patterns in field emitter array cathodes,Technical Digest of 6th IVMC,Newport,USA,1993,120-121.[16]Liu Guangyi,Zhu Mignhui,Tang Shiweng,Zhu Changchun,Liu Jinsheng,Manufacturing a patternable metallized substrate for tungsten ultra-long field emitter array by use of the double ion beam deposition method,J.Vac.Sci.Tech,1996,B-14(3),1963-1965.[17]刘光诒.朱世棋,吕庆年,金能文,王德安,刘金声,制造大面积超长钨发射体阵列件W-UFEA的光电子学方法,电子器件, 1994,17(3):42-46.[18]D.G.Pflug,et al ,100nm gate aperture field emitter arrays,Tech.Dig.of llth IVMC,Asheville NC,USA,1998,130-131.[19]P.R.Schwoebel,C.A.Spindt,E.Brodie.Electron emission enhancement by overcoating molybdenum field-emitter array with titaninm,zirconium and hafnium,J.Vac,Sci.Tech,1995,B-13(2):338-343.[20]D.S.Y.Hsu,H.Gray,.A low-voltage,low-capacitance,vertical multi-layer thin film edge dispenser field emitter array electron surece,Tech,Digest of llth IVMC,Asheville,NC,USA,1998,82-83.[21]M.S.Lim,et al,New lateral field emitter array inherently integrated with thin film transistor,Material Issues in Vac.Microele,MRS,ISBN 1-55899-415-7,1998,509,9-14.[22]K.Okano,et al.Low-threshold cold cathodes made of nitrogen-doped chemical-vapor-deposited diamond.[J].Nature.1996,381:140-[23]Gulyaev Yu V,et al,Carbon nanotube structures-a new material of vacuum microelectromics,Tech,Digest of 9th IVMC,St Petersburg,Russia,1996,5-9.[24]W.Zhu ,et al.Defect-enhanced electron field emission from chemical vapor deposited diamond,J.Appl,Phys,1995,78,2707-2711.[25]W.Zhu,et al.Electron emission from nano-structured diamond,Materials Issues in Vacuum Microelectronics,MRS,ISBN 1-55899-415-7,1998,509,53-58.[26]K.Geissler,et al.Intense laser-induced self-emission of electrons from ferroelectrics,Phys,Lett,1993,A-176(9):387-392.[27]A.G.Chakbovskoi.et al.Method of fabrication of matrix carbon fiber emission cathode struetures for flat-panel indicatiors,J.Vac.Sci.Tech,1993,B-11(2),511-513.[28]K.H.Schoenbach,Microhollow cathode discharges,Appl.Phys,Lett.1996,68(1),13-15.
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