Liu Yuling, Wang Guizhen, Xu Xiaohui, Li Xiangdu, Zhang Zhihua. CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION[J]. Journal of Electronics & Information Technology, 1996, 18(1): 109-112.
Citation:
Liu Yuling, Wang Guizhen, Xu Xiaohui, Li Xiangdu, Zhang Zhihua. CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION[J]. Journal of Electronics & Information Technology, 1996, 18(1): 109-112.
Liu Yuling, Wang Guizhen, Xu Xiaohui, Li Xiangdu, Zhang Zhihua. CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION[J]. Journal of Electronics & Information Technology, 1996, 18(1): 109-112.
Citation:
Liu Yuling, Wang Guizhen, Xu Xiaohui, Li Xiangdu, Zhang Zhihua. CONTROLLING METALLIC IMPURITY AND MICRODEFECT IN SILICON CVD EPITAXY LAYER USING CONTRARY COMPENSATION[J]. Journal of Electronics & Information Technology, 1996, 18(1): 109-112.
This paper analyzes the mechanism models of metallic impurity infection and adsorption-desorption, and the distribution law of microdefect in growing of silicon CVD epitaxy, and then a new epitaxy technology is proposed, which is optimized by using contrary compensation, and by which the metallic impurity and microdefect in silicon epitaxy layer are reduced effectively.
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