Wang Xiao-xia, Liao Xian-heng, Luo Ji-run, Zhao Qing-lan. A Reservoir Oxide Cathode[J]. Journal of Electronics & Information Technology, 2006, 28(11): 2179-2181.
Citation:
Wang Xiao-xia, Liao Xian-heng, Luo Ji-run, Zhao Qing-lan. A Reservoir Oxide Cathode[J]. Journal of Electronics & Information Technology, 2006, 28(11): 2179-2181.
Wang Xiao-xia, Liao Xian-heng, Luo Ji-run, Zhao Qing-lan. A Reservoir Oxide Cathode[J]. Journal of Electronics & Information Technology, 2006, 28(11): 2179-2181.
Citation:
Wang Xiao-xia, Liao Xian-heng, Luo Ji-run, Zhao Qing-lan. A Reservoir Oxide Cathode[J]. Journal of Electronics & Information Technology, 2006, 28(11): 2179-2181.
A new kind of reservoir oxide cathode is presented in this paper. The characteristics of the cathode, such as, DC and PC emission, resistance to poisoning and lifetime, are better than those of conventional oxide cathode under same conditions. The SEM of the surface emission material and the XRD of the reservoir active material of the cathode are analyzed, and the THEM (Thermionic Electronic Emission Microscopy) of the Ni-net surface of the cathode is observed, based on which the emission mechanism of the cathode is discussed.
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