STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs

Zhang Guicheng; Yang Yi

Volume 9 Issue 2

Mar. 1987

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Article Navigation > Journal of Electronics & Information Technology > 1987 > 9(2): 156-160

Zhang Guicheng, Yang Yi. STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs[J]. Journal of Electronics & Information Technology, 1987, 9(2): 156-160.

Citation:

Zhang Guicheng, Yang Yi. STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs[J]. Journal of Electronics & Information Technology, 1987, 9(2): 156-160.

Zhang Guicheng, Yang Yi. STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs[J]. Journal of Electronics & Information Technology, 1987, 9(2): 156-160.

Citation:

Zhang Guicheng, Yang Yi. STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs[J]. Journal of Electronics & Information Technology, 1987, 9(2): 156-160.

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STUDY OF Zn, Zn-Cd DIFFUSION IN In_xGa_1-xAs

Received Date: 1985-02-26
Rev Recd Date: 1985-07-30
Publish Date: 1987-03-19

Abstract

Abstract

The diffusion of Zn, Zn-Cd in InxGa1-xAs is investigated using ZnAs2 and ZnAsa+Cd as the diffusion source. The effect of the diffusion temperature, diffusion time, variety of the diffusion source and composition of the material on the relation of the xj-t1/2 is given. The diffusion velocity (xj2/t) of the Zn in InxGa1-xAs is faster than that of the Zn-Cd in InxGa1-xAs. The surface hole concentration of Zn in InxGa1-xAs is 11019-21020 cm-2 at 500-600℃. At the same diffusion condition, the surface concentration of Zn in InxGa1-xAs is higher than that of Zn in InP. Reducing of contact resistance by use of InxGa1-xAs contact layer for 1.3m LED can be expected.

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References(1)

References

Yuichi Matsuchima, et al., Appl. Phys., 35(1979),466.[2]邬祥生等,发光与显示,1(1983), 1.[3]Yoshihisa, Yamamoto, et al., Jpn. J. Appl. Phys.,19(1980), 121.[4]Y-R Yuan, et al., J. Appl. Phys., 54(1983), 6044.[5]T. Kagawa, Jpn. J. Appl. Phys., 20(1981), 597.[6]Y. Horikoshi, et al., ibid., 20(1981), 437.[7]Y. Motsumoto, ibid., 22(1983), 1699.[8]张桂成等,电子科学学刊,5(1983), 221.

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