STUDY OF POWER GATE TURN-OFF THYRISTOR

Lu Zhengyu

Volume 10 Issue 6

Nov. 1988

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Article Navigation > Journal of Electronics & Information Technology > 1988 > 10(6): 558-562

Lu Zhengyu. STUDY OF POWER GATE TURN-OFF THYRISTOR[J]. Journal of Electronics & Information Technology, 1988, 10(6): 558-562.

Citation:

Lu Zhengyu. STUDY OF POWER GATE TURN-OFF THYRISTOR[J]. Journal of Electronics & Information Technology, 1988, 10(6): 558-562.

Lu Zhengyu. STUDY OF POWER GATE TURN-OFF THYRISTOR[J]. Journal of Electronics & Information Technology, 1988, 10(6): 558-562.

Citation:

Lu Zhengyu. STUDY OF POWER GATE TURN-OFF THYRISTOR[J]. Journal of Electronics & Information Technology, 1988, 10(6): 558-562.

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STUDY OF POWER GATE TURN-OFF THYRISTOR

Lu Zhengyu

Received Date: 1987-02-21
Rev Recd Date: 1987-07-03
Publish Date: 1988-11-19

Abstract

Abstract

Based on GTO s turn-off theory, parameter design and production technology are studied. Its performance characteristic and doping profile are measured. A 500 A reverse-blocked power GTO is made by using domestic material, equipment and installatiins. The technological process can be applied to the mass production of GTO.

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References(1)

References

S. Asai, N. Sawaki, I. Akasaki, K. Iwata, IEEE Trans. on ED, ED-32(1985), 1894-1896.[2][美] S. K.格安迪著,张光华,钟士谦译,功率半导体器件,机械工业出版社,1982, pp. 191-107.[3]N. Akio, Solid state Electron., 28(1985), 677-687.[4]吕征宇,大容量门极可关断晶闸管(GTO)的研究及其应用于10kHz, 100kW中频电源的探讨,博士论文,1987年.[5]M. Azuma, K. Takigami, IEEE Electron Device Letters, 1(1980), 203-205.

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