Watanae S, Shigemo M, Nakayama N, et al.. Silicon- Monohydride Termination of Silicon-111 Surface Formed by Boiling Water[J].Japanese Journal of Applied Physics.1991, 30(12B):3575-[2]Higashi G S, Chabal Y J, et al..Ideal hydrogen termination of the Si (111) surface[J].Applied Physics Letter.1990, 56(7):656-[3]Hara. S, Teraj. T, Okushi H, et al.. Pinning-controlled ohmic contacts: Application to SiC(0001). Applied Suface Science, 1996, 107: 218-221.[4]Teraji T, Hara S, Okushi H, et al.. Ideal ohmic contacts to n-type 6H-SiC by reduction of Schottky barrier height[J].Applied Physics Letter.1997, 71(5):689-[5]Lin M E, Strite S, Agarwal A, et al.. GaN grown on hydrogen plasma cleaned 6H-SiC substrates[J].Applied Physics Letter.1993, 62(7):702-[6]罗小蓉,李肇基,张波等, 表面氢化对SiC/金属接触的作用机理. 固体电子研究与进展,2004,24(2):164-157.[7]Hollinger G, Himpsel F J. Probing the transition layer at the SiO2-Si/interface using core level photoemission[J].Applied Physics Letter.1984, 44(1):93-[8]Fursin, Zhao L G., Weiner J H. Nickel ohmic contacts to p and n-type 4H-SiC. Electronics Letters, 2001, 37 (17): 1092-1093[9]Fang R C, Ley L. Natural and actual valence-band discontinuities in the: H system: A photoemission study[J].Physics Review B.1989, 40:3818-3829[10]Hollering M, Maier F, Sieber N. Electronic states of an ordered oxide on C-termination 6H-SiC.[J]. Surface Science.1999,442:531-[11]Tsuchida H, Kamata I, Izuml K. Infraed spectroscopy of hydrideon the 6H-SiC surface[J].Applied Physics Letter.1997, 70(23):3072-[12]Hara S, Teraj T, Okushi H, et al.. Control of Schottky and ohmicinterfaces by unpinning Fermi level[J].Applied Suface Science.1997, 117/118:394-399[13]邬瑞彬,候永,龚敏等. H2表面处理形成Al/n型6H-SiC欧姆接触及其退化机制,四川大学学报(自然科学版),2003,40(3):488-491.
|