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Volume 28 Issue 11
Sep.  2010
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ZHANG Tianqi, QUAN Shengrong, QIANG Xingzi, JIANG Xiaolei. Time-frequency Analysis Method Based on Multi-scale Chirplet Sparse Decomposition and Wigner-Ville Transform[J]. Journal of Electronics & Information Technology, 2017, 39(6): 1333-1339. doi: 10.11999/JEIT160750
Citation: Luo Xiao-rong, Zhang Bo, Li Zhao-ji, Gong Min. Study on the Hydrogenation of SiC Surface[J]. Journal of Electronics & Information Technology, 2006, 28(11): 2191-2194.

Study on the Hydrogenation of SiC Surface

  • Received Date: 2005-02-02
  • Rev Recd Date: 2005-07-08
  • Publish Date: 2006-11-19
  • The conception and the structure of transition layer of 6H-SiC (0001)/ SiO2 are proposed in this paper. The hydrogenation model of SiC surface is developed by analyzing the reaction mechanism of SiC surface and HF solution. The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface. The ideal SiC surface is formed. The model is applied to treat SiC surface of the SiC/ metal contacts, Schottky junctions with ideality factor n=1.20~1.25 and Ohmic contacts with =510-3 cm2~710-3 cm2 are obtained under the condition of below 100℃. Its advantages lie in not only avoiding the annealing at 800~1200℃ for Ohmic contacts, but also improving the electrical performances of the Schottky barrier contacts. The hydrogenation model of SiC surface is good agreement with experiments.
  • Watanae S, Shigemo M, Nakayama N, et al.. Silicon- Monohydride Termination of Silicon-111 Surface Formed by Boiling Water[J].Japanese Journal of Applied Physics.1991, 30(12B):3575-[2]Higashi G S, Chabal Y J, et al..Ideal hydrogen termination of the Si (111) surface[J].Applied Physics Letter.1990, 56(7):656-[3]Hara. S, Teraj. T, Okushi H, et al.. Pinning-controlled ohmic contacts: Application to SiC(0001). Applied Suface Science, 1996, 107: 218-221.[4]Teraji T, Hara S, Okushi H, et al.. Ideal ohmic contacts to n-type 6H-SiC by reduction of Schottky barrier height[J].Applied Physics Letter.1997, 71(5):689-[5]Lin M E, Strite S, Agarwal A, et al.. GaN grown on hydrogen plasma cleaned 6H-SiC substrates[J].Applied Physics Letter.1993, 62(7):702-[6]罗小蓉,李肇基,张波等, 表面氢化对SiC/金属接触的作用机理. 固体电子研究与进展,2004,24(2):164-157.[7]Hollinger G, Himpsel F J. Probing the transition layer at the SiO2-Si/interface using core level photoemission[J].Applied Physics Letter.1984, 44(1):93-[8]Fursin, Zhao L G., Weiner J H. Nickel ohmic contacts to p and n-type 4H-SiC. Electronics Letters, 2001, 37 (17): 1092-1093[9]Fang R C, Ley L. Natural and actual valence-band discontinuities in the: H system: A photoemission study[J].Physics Review B.1989, 40:3818-3829[10]Hollering M, Maier F, Sieber N. Electronic states of an ordered oxide on C-termination 6H-SiC.[J]. Surface Science.1999,442:531-[11]Tsuchida H, Kamata I, Izuml K. Infraed spectroscopy of hydrideon the 6H-SiC surface[J].Applied Physics Letter.1997, 70(23):3072-[12]Hara S, Teraj T, Okushi H, et al.. Control of Schottky and ohmicinterfaces by unpinning Fermi level[J].Applied Suface Science.1997, 117/118:394-399[13]邬瑞彬,候永,龚敏等. H2表面处理形成Al/n型6H-SiC欧姆接触及其退化机制,四川大学学报(自然科学版),2003,40(3):488-491.
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