INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI

Ren Bingyan; Li Wei

Volume 13 Issue 3

May 1991

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Ren Bingyan, Li Wei. INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI[J]. Journal of Electronics & Information Technology, 1991, 13(3): 332-336.

Citation:

Ren Bingyan, Li Wei. INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI[J]. Journal of Electronics & Information Technology, 1991, 13(3): 332-336.

Ren Bingyan, Li Wei. INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI[J]. Journal of Electronics & Information Technology, 1991, 13(3): 332-336.

Citation:

Ren Bingyan, Li Wei. INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI[J]. Journal of Electronics & Information Technology, 1991, 13(3): 332-336.

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INVESTIGATION OF IRRADIATION DONOR IN NTD CZ SI

Ren Bingyan,
Li Wei

Received Date: 1989-09-26
Rev Recd Date: 1990-06-29
Publish Date: 1991-05-19

Abstract

Abstract

The annealing behaviour and property of irradiation donor (ID) in NTDCZSi have been studied by using the Hall effect measurements and TEM. In addidon, the effects of a variety of neutron doses and impurity (oxygen and carbon) concentrations on the formation of ID are discussed. The phenomenon of Donor plateau is discovered for the first time. The experimental results show that ID creates about a 20 meV donor level in the forbidden band, which originates from the interface states of precipitated Si/SiO2.

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References

徐岳生等,NTDCZSi的本征吸除效应,1988年硅材料学术会议论文集,河北北戴河,第524页.[2]孟祥提,电子学报,1986年,第2期,第15页.[3]R. T. Young, et al., J. Appl. phys., 49 (1978), 4752.[4]Л.С.Смирнов著,王正元,杜光庭译,半导体的反应方法掺杂,科学出版社,1981年,第73-120页.[5]J. Bourgoin, et al., Point Defects in Semiconductors II, Germany, Springer-Verlag, Berlin Heidelberg, (1983), P. 247.[6]曹建中等,电子技术与测试,1986年,第1期,第25页.

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