-Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD

Hai Yuhan; Chen Yuanxin; Zhang Baochui

Volume 13 Issue 1

Jan. 1991

Turn off MathJax

Article Contents

Article Navigation > Journal of Electronics & Information Technology > 1991 > 13(1): 57-64

Hai Yuhan, Chen Yuanxin, Zhang Baochui. -Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD[J]. Journal of Electronics & Information Technology, 1991, 13(1): 57-64.

Citation:

Hai Yuhan, Chen Yuanxin, Zhang Baochui. -Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD[J]. Journal of Electronics & Information Technology, 1991, 13(1): 57-64.

Hai Yuhan, Chen Yuanxin, Zhang Baochui. -Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD[J]. Journal of Electronics & Information Technology, 1991, 13(1): 57-64.

Citation:

Hai Yuhan, Chen Yuanxin, Zhang Baochui. -Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD[J]. Journal of Electronics & Information Technology, 1991, 13(1): 57-64.

PDF( 1481 KB)

-Si:H PHOTOEMISSIVE MODEL WITH DRIFT ELECTRIC FIELD

Received Date: 1989-10-09
Rev Recd Date: 1990-06-14
Publish Date: 1991-01-19

Abstract

Abstract

The quantum efficiency of photocathodes which are diffusion type or drift type, or which produce charge amplification effect in high field is analysed. a-Si:H photoemissive model with internal or external electric field is presented. Its structure is p-i-n -Si:H/Bi2S3 or SnO2--Si:H-Al:Cs:O. Its quantum efficiency and photosensitivity are estirnated. They are 1-102 and 103-105 A/lm respectively. The experimental results of the photoemissive model with external electric field show that the structural design is correct.

FullText(HTML)

References(1)

References

H.Schade,J. Pankove, Surface Science, 89(1979), 543.[2][2][3]N. Foss, J.Appl, Phys., 42(1971), 3764.[4][3][5]A. Sommer著,侯询译,光电发射材料,科学出版社,1979, p. 313.[6]黄昆,韩汝琦,半导体物理基础,科学出版社,1979, p.101.[7]P. Zanzucchi, et al., J. Appl. Phys., 48(1977), 5227.[6] J. Mort, et al., Appl. Phys. Lett., 38(1981), 1277.[7] R. Willians, R. Crandall, RCA Rev., 40(1979), 371.[8] R. Engstron, RCA Rev., 16(1955), 116.[9] D. Carlson, Advances in amorphous silicon solar cells, 14th IEEE Photovoltaic Specialists Conf., San Diego, (1980), p. 291. [10] A. Rose, Concepts in Photoconductivity and Allied Problems, John Wiley Sons, Inc., (1963), p. 77.[11] W. Spear, et al., J. Non-Cryst. Solids, 15(1974), 410.[12] W. Summer, Photosensitors, Chapmen Hall Ltd., London, (1957), p. 60.

Relative Articles

Supplements(0)

Cited By

Proportional views