Liu Yuling, Jin Jie, Xu Xiaohui, Zhang Dechen. RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY[J]. Journal of Electronics & Information Technology, 1996, 18(3): 332-336.
Citation:
Liu Yuling, Jin Jie, Xu Xiaohui, Zhang Dechen. RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY[J]. Journal of Electronics & Information Technology, 1996, 18(3): 332-336.
Liu Yuling, Jin Jie, Xu Xiaohui, Zhang Dechen. RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY[J]. Journal of Electronics & Information Technology, 1996, 18(3): 332-336.
Citation:
Liu Yuling, Jin Jie, Xu Xiaohui, Zhang Dechen. RESEARCH ON REDUCING THE SELF-DOPING DURING SILICON CVD EPITAXY[J]. Journal of Electronics & Information Technology, 1996, 18(3): 332-336.
This paper, first, analyzes self-doping mechanism, then develops an optimization technology by using the contrary compensation principle, adsorption-desorption mechanism and transform of viscous flow layer between static and dymanic conditons. It results in controlling efffectively self-doping under normal condition.
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