Heating process of solid-liquid-solid (SLS) growth of silicon nanowires

Xing Yingjie; Xi Zhonghe; Yu Dapeng; Hang Qingling; Yan Hanfei; Feng Sunqi; Xue Zengquan

Volume 25 Issue 2

Feb. 2003

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Article Navigation > Journal of Electronics & Information Technology > 2003 > 25(2): 259-262

Xing Yingjie, Xi Zhonghe, Yu Dapeng, Hang Qingling, Yan Hanfei, Feng Sunqi, Xue Zengquan. Heating process of solid-liquid-solid (SLS) growth of silicon nanowires[J]. Journal of Electronics & Information Technology, 2003, 25(2): 259-262.

Citation:

Xing Yingjie, Xi Zhonghe, Yu Dapeng, Hang Qingling, Yan Hanfei, Feng Sunqi, Xue Zengquan. Heating process of solid-liquid-solid (SLS) growth of silicon nanowires[J]. Journal of Electronics & Information Technology, 2003, 25(2): 259-262.

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Heating process of solid-liquid-solid (SLS) growth of silicon nanowires

Received Date: 2001-08-14
Rev Recd Date: 2001-11-26
Publish Date: 2003-02-19

Abstract

Abstract

Large-scale amorphous Si nanowires are prepared by heating the Si substrate at 950-1000C under the ambient of Ar/H2 (2.5104Pa) using Ni (or Au) catalyst. The nanowires have a length up to several tens micron and a diameter of 10-40 nm. A solid-liquid-solid (SLS) mechanism is found controlling the nanowire growth. The heating process during SLS growth is studied detailedly using SEM and TEM. Effects of several processing variables such as the pressure, temperature and heating time are investigated individually. The effect of three heating steps is also discussed.

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References(1)

References

S. Iijima, Helical microtubules of graphitic carbon, Nature, 1991, 354(6348), 56-58.[2]D.P. Yu, Z. G. Bai, J. J. Wang, Y. H. Zou, W. Qian, J. S. Fu, H. Z. Zhang, Y. Ding, G. C.Xiong, S. Q. Feng, Direct evidence of quantum confinement from the size dependence of the photoluminescence of silicon quantum wires, Phys. Rev. B, 1999, 59(4), R2498-R2501.[3]Y. Cui, C. M. Lieber, Functional nanoscale electronic devices assembled using silicon nanowire building blocks, Science, 2001, 291(5505), 851-853.[4]A.M. Morales, C. M. Lieber, A laser ablation method for the synthesis of crystalline semiconductor nanowires, Science, 1998, 279(5348), 208-211.[5]Yu D. P., Bai Z. G., Ding Y., Hang Q. L., Zhang H. Z., Wang J. J., Zou Y. H., Qian W., Xiong G.C., Zhou H. T., Feng S. Q., Nanoscale silicon wires synthesized using simple physical evaporation,Applied Physics Letters, 1998, 72(26), 3458-3460.[6]J. Westwater, D. P. Gosain, S. Tomiya, S. Usui, H. Ruda, Growth of silicon nanowires via gold/silane vapor-liquid-solid reaction, J. Vac. Sci. Technol. B, 1997, 15(3), 554-557.[7]R.S. Wagner, W. C. Ellis, Vapor-liquid-solid mechanism of single crystal growth, Applied Physics Letters, 1964, 4(5), 89-90.[8]E.I. Givargizov, Fundamental aspects of VLS growth, J. Cryst. Growth, 1975, 31(1), 20-30.

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